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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI4943BDY-T1-GE3 DISTI # SI4943BDY-T1-GE3-ND | Vishay Siliconix | MOSFET 2P-CH 20V 6.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI4943BDY-T1-GE3 DISTI # SI4943BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4943BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 | |
| SI4943BDY-T1-GE3 DISTI # 26R1900 | Vishay Intertechnologies | DUAL P CHANNEL MOSFET, -20V, 8.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes | 0 | |
| SI4943BDY-T1-GE3 DISTI # 15R5133 | Vishay Intertechnologies | DUAL P CHANNEL MOSFET, -20V, 8.4A,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes | 0 | |
| SI4943BDY-T1-GE3 DISTI # 781-SI4943BDY-GE3 | Vishay Intertechnologies | MOSFET 20V 8.4A 2.0W 19mohm @ 10V RoHS: Compliant | 0 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI4943BDY-T1-E3 OMO.#: OMO-SI4943BDY-T1-E3 |
MOSFET 20V 8.4A 2W |
|
|
Mfr.#: SI4943BDY-T1-GE3 OMO.#: OMO-SI4943BDY-T1-GE3 |
MOSFET 20V 8.4A 2.0W 19mohm @ 10V |
|
Mfr.#: SI4943BDY-T1-GE3 OMO.#: OMO-SI4943BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 8.4A 2.0W 19mohm @ 10V |
|
Mfr.#: SI4943BDY-T1-E3-CUT TAPE |
Nuovo e originale |
|
|
Mfr.#: SI4943BDY OMO.#: OMO-SI4943BDY-1190 |
Nuovo e originale |
|
|
Mfr.#: SI4943BDY(R301) OMO.#: OMO-SI4943BDY-R301--1190 |
Nuovo e originale |
|
|
Mfr.#: SI4943BDY-T1-E3 OMO.#: OMO-SI4943BDY-T1-E3-VISHAY |
MOSFET 2P-CH 20V 6.3A 8-SOIC |