OMO ElectronicOMO Electronic
Expand menu
0 Carrello

IPD80N06S3-09

IPD80N06S3-09
Mfr. #:
IPD80N06S3-09
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 55V 80A DPAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD80N06S3-09 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD80N06S3-09 DatasheetIPD80N06S3-09 Datasheet (P4-P6)IPD80N06S3-09 Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
55 V
Id - Corrente di scarico continua:
80 A
Rds On - Resistenza Drain-Source:
8.4 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
107 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
37 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
42 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
23 ns
Parte # Alias:
IPD80N06S309XT
Unità di peso:
0.139332 oz
Tags
IPD80N, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-252
***i-Key
MOSFET N-CH 55V 80A TO252-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 55 V 8 mOhm 44 nC HEXFET® Power Mosfet - TO-252AA
***essParts.Net
INTERNATIONAL RECTIFIER IRLR3705ZPBF / MOSFET N-CH 55V 42A DPAK INTER
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 6.5 Milliohms,ID 42A,D-Pak (TO-252AA),-55C
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 55V, 89A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:89A;
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D-PAK; Current Id Max: 89A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 130A; SMD Marking: IRLR3705Z; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***ineon SCT
60V, N-Ch, 6.9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et Europe
Trans MOSFET N-CH 60V 97A 3-Pin TO-252 T/R
***ronik
N-CH 60V 97A 6,3mOhm TO252 RoHSconf
***el Electronic
MOSFET 60V 97A 136W AEC-Q101 Qualified
***ark
N-Channel 60-V (D-S) 175C Mosfet
***ical
Trans MOSFET N-CH 40V 16.8A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 31V~40V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 40V 16.8A/70A TO252
***ical
Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 60V 14.8A/70A TO252
Parte # Mfg. Descrizione Azione Prezzo
IPD80N06S3-09
DISTI # IPD80N06S3-09-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD80N06S3-09
    DISTI # IPD80N06S3-09    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-252 - Bulk (Alt: IPD80N06S3-09)
    RoHS: Not Compliant
    Min Qty: 695
    Container: Bulk    		Americas - 0
    • 6950:$0.4569
    • 3475:$0.4649
    • 2085:$0.4809
    • 1390:$0.4999
    • 695:$0.5179
    IPD80N06S3-09
    DISTI # 726-IPD80N06S3-09    		Infineon Technologies AGMOSFET N-Ch 55V 80A DPAK-2
    RoHS: Compliant    		0
      IPD80N06S3-09Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		7004
      • 1000:$0.4700
      • 500:$0.5000
      • 100:$0.5200
      • 25:$0.5400
      • 1:$0.5800
      Immagine Parte # Descrizione
      IPD80N04S306ATMA1

      Mfr.#: IPD80N04S306ATMA1

      OMO.#: OMO-IPD80N04S306ATMA1

      		 MOSFET N-CHANNEL_30/40V
      IPD80N04S3-06

      Mfr.#: IPD80N04S3-06

      OMO.#: OMO-IPD80N04S3-06

      		 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
      IPD80N06S3-09

      Mfr.#: IPD80N06S3-09

      OMO.#: OMO-IPD80N06S3-09

      		 MOSFET N-Ch 55V 80A DPAK-2
      IPD80N04S306BATMA1

      Mfr.#: IPD80N04S306BATMA1

      OMO.#: OMO-IPD80N04S306BATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CHANNEL_30/40V
      IPD80N04S3-06QN0406

      Mfr.#: IPD80N04S3-06QN0406

      OMO.#: OMO-IPD80N04S3-06QN0406-1190

      		 Nuovo e originale
      IPD80N04S3-06

      Mfr.#: IPD80N04S3-06

      OMO.#: OMO-IPD80N04S3-06-1190

      		 MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T
      IPD80N04S3-06 QN0406

      Mfr.#: IPD80N04S3-06 QN0406

      OMO.#: OMO-IPD80N04S3-06-QN0406-1190

      		 Nuovo e originale
      IPD80N04S3-06B

      Mfr.#: IPD80N04S3-06B

      OMO.#: OMO-IPD80N04S3-06B-1190

      		 Nuovo e originale
      IPD80N04S306ATMA1

      Mfr.#: IPD80N04S306ATMA1

      OMO.#: OMO-IPD80N04S306ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 40V 90A TO252-3
      IPD80N06S3-09

      Mfr.#: IPD80N06S3-09

      OMO.#: OMO-IPD80N06S3-09-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 80A TO252-3
      Disponibilità
      Azione:
      Available
      Su ordine:
      2500
      Inserisci la quantità:
      Il prezzo attuale di IPD80N06S3-09 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Iniziare con
      Top