FDS8672S

Mfr. #:: FDS8672S
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET 30V N-Channel PowerTrench
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDS8672S Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SO-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 18 A

Rds On - Resistenza Drain-Source:: 4.8 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 1 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: PowerTrench SyncFET

Confezione:: Bobina

Altezza:: 1.75 mm

Lunghezza:: 4.9 mm

Prodotto:: MOSFET piccolo segnale

Serie:: FDS8672S

Tipo di transistor:: 1 N-Channel

Larghezza:: 3.9 mm

Marca:: ON Semiconductor / Fairchild

Tempo di caduta:: 4 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 4 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 26 ns

Tempo di ritardo di accensione tipico:: 12 ns

Unità di peso:: 0.004586 oz

Tags: FDS8672, FDS867, FDS86, FDS8, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS8672S Descrizione

*** Source Electronics: Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R / MOSFET N-CH 30V 18A 8-SOIC

***ure Electronics: N-Channel 30 V 4.8 mO 2.5 W PowerTrench SyncFET Surface Mount- SOIC-8

***nell: MOSFET, N CH, 30V, 18A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology.

***roFlash: IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

***roFlash: Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi

***ure Electronics: N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

***Yang: Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

*** Source Electronics: Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R / MOSFET N-CH 30V 14.5A 8-SOIC

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14.5A I(D),SO

***emi: N-Channel PowerTrench® SyncFET™, 30V, 14.5A, 6.0mΩ

***nell: MOSFET, N CH, 30V, 14.5A, SOIC-8; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id: 14.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltag

***rchild Semiconductor: The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***Yang: Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***ure Electronics: P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ

*** Electronics: ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V

***p One Stop: Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R

***rchild Semiconductor: This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDS8672S DISTI # V79:2366_18815742	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R	17250	2500:$0.6183 1000:$0.6720 500:$0.8053 100:$0.9129 10:$1.1092 1:$1.2446
FDS8672S DISTI # V72:2272_06300891	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R	1251	1000:$0.7223 500:$0.8586 250:$1.0152 100:$1.0162 25:$1.2896 10:$1.2915 1:$1.4908
FDS8672S DISTI # FDS8672SCT-ND	ON Semiconductor	MOSFET N-CH 30V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11299In Stock	1000:$0.8124 500:$0.9805 100:$1.2606 10:$1.5690 1:$1.7400
FDS8672S DISTI # FDS8672SDKR-ND	ON Semiconductor	MOSFET N-CH 30V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11299In Stock	1000:$0.8124 500:$0.9805 100:$1.2606 10:$1.5690 1:$1.7400
FDS8672S DISTI # FDS8672STR-ND	ON Semiconductor	MOSFET N-CH 30V 18A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$0.7615
FDS8672S DISTI # 26122719	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R	17250	2500:$0.6183 1000:$0.6720 500:$0.8053 100:$0.9129 12:$1.1092
FDS8672S DISTI # 25743487	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R	1251	1000:$0.7223 500:$0.8586 250:$1.0152 100:$1.0162 25:$1.2896 12:$1.2915
FDS8672S DISTI # 24584354	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R	1019	101:$0.6250
FDS8672S DISTI # FDS8672S	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R (Alt: FDS8672S) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€1.1329 5000:€0.8809 10000:€0.7309 15000:€0.6169 25000:€0.5709
FDS8672S DISTI # FDS8672S	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8672S) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5929 5000:$0.5919 10000:$0.5729 15000:$0.5719 25000:$0.5699
FDS8672S DISTI # FDS8672S	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R (Alt: FDS8672S) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.5688 5000:$0.5470 7500:$0.5267 12500:$0.5079 25000:$0.4904 62500:$0.4740 125000:$0.4663
FDS8672S DISTI # 84W8872	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84W8872) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.9400
FDS8672S DISTI # 08N9305	ON Semiconductor	MOSFET Transistor, N Channel, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V , RoHS Compliant: Yes	0	1:$0.6480 2500:$0.6430 10000:$0.6190 25000:$0.5990
FDS8672S DISTI # 84W8872	ON Semiconductor	MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V , RoHS Compliant: Yes	1019	1:$0.5000 10:$0.5000 25:$0.5000 50:$0.5000 100:$0.5000 250:$0.5000 500:$0.5000 1000:$0.5000
FDS8672S	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	376637	1000:$1.0600 500:$1.1200 100:$1.1600 25:$1.2100 1:$1.3000
FDS8672S DISTI # 512-FDS8672S	ON Semiconductor	MOSFET 30V N-Channel PowerTrench RoHS: Compliant	3735	1:$1.6300 10:$1.3900 100:$1.0700 500:$0.9400 1000:$0.7420 2500:$0.6580 10000:$0.6340
FDS8672S DISTI # C1S226600427384	ON Semiconductor	Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R RoHS: Compliant	1251	250:$1.0152 100:$1.0162 25:$1.2896 10:$1.2916
FDS8672S DISTI # C1S541901585406	ON Semiconductor	MOSFETs	17250	1000:$0.6720 500:$0.8053 100:$0.9129 10:$1.1092
FDS8672S DISTI # 2322615	ON Semiconductor	MOSFET, N CH, 30V, 18A, SOIC-8 RoHS: Compliant	2948	1:$2.5900 10:$2.2000 100:$1.7000 500:$1.5000 1000:$1.1800 2500:$1.0500 10000:$1.0100
FDS8672S DISTI # 2322615	ON Semiconductor	MOSFET, N CH, 30V, 18A, SOIC-8 RoHS: Compliant	2953	5:£1.4100 25:£0.9940 100:£0.7590 250:£0.6840 500:£0.6000

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Disponibilità

Azione:: Available
Su ordine:: 1986
Inserisci la quantità:

Il prezzo attuale di FDS8672S è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,62 USD~~; ~~1,62 USD~~

10: ~~1,38 USD~~; ~~13,80 USD~~

100: ~~1,06 USD~~; ~~106,00 USD~~

500: ~~0,94 USD~~; ~~470,00 USD~~

1000: ~~0,74 USD~~; ~~742,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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FDS8672S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes