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IXFH36N60P

IXFH36N60P
Mfr. #:
IXFH36N60P
Produttore:
Littelfuse
Descrizione:
Darlington Transistors MOSFET 600V 36A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH36N60P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFH36N60P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
FET - Single
Serie
IXFH36N60
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
650 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
22 ns
Ora di alzarsi
25 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
36 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
190 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
80 ns
Tempo di ritardo all'accensione tipico
30 ns
Transconduttanza diretta-Min
39 S
Modalità canale
Aumento
Tags
IXFH36, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 190 mO PolarHT hiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD
***ukat
N-Ch 600V 36A 650W 0,19R TO247AD
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFH36N60P
DISTI # IXFH36N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		93In Stock
  • 510:$6.1551
  • 120:$7.3463
  • 30:$8.1407
  • 1:$9.9300
IXFH36N60P
DISTI # 58M7600		IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:650W,MSL:-RoHS Compliant: Yes40
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
IXFH36N60P
DISTI # 747-IXFH36N60P		IXYS CorporationMOSFET 600V 36A
RoHS: Compliant		695
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
  • 1000:$5.6100
IXFH36N60PIXYS Corporation36 A, 600 V, 0.19 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD5
  • 4:$5.4000
  • 2:$7.2000
  • 1:$10.8000
IXFH36N60P
DISTI # 1427299		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		40
  • 1:$15.8300
  • 30:$12.9800
  • 120:$11.7100
  • 510:$9.8200
IXFH36N60P
DISTI # 1427299		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		40
  • 1:£8.7400
  • 5:£8.1500
  • 10:£6.1000
  • 50:£5.6800
  • 100:£5.5500
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 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A
IXFH36N60P

Mfr.#: IXFH36N60P

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IXFH32N50

Mfr.#: IXFH32N50

OMO.#: OMO-IXFH32N50-IXYS-CORPORATION

 MOSFET 500V 32A
IXFH32N50Q

Mfr.#: IXFH32N50Q

OMO.#: OMO-IXFH32N50Q-IXYS-CORPORATION

 MOSFET 32 Amps 500V 0.15 Rds
IXFH30N50

Mfr.#: IXFH30N50

OMO.#: OMO-IXFH30N50-IXYS-CORPORATION

 MOSFET 30 Amps 500V 0.16 Rds
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IXFH36N60P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
8,10 USD
8,10 USD
10
7,70 USD
76,95 USD
100
7,29 USD
729,00 USD
500
6,88 USD
3 442,50 USD
1000
6,48 USD
6 480,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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