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BF510,215

BF510,215
Mfr. #:
BF510,215
Produttore:
NXP Semiconductors
Descrizione:
RF JFET Transistors TAPE7 FET-RFSS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BF510,215 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BF510,215 DatasheetBF510,215 Datasheet (P4-P6)BF510,215 Datasheet (P7-P9)
ECAD Model:
Maggiori informazioni:
BF510,215 maggiori informazioni BF510,215 Product Details
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
JFET
Tecnologia:
si
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
20 V
Vgs - Tensione di rottura gate-source:
20 V
Id - Corrente di scarico continua:
30 mA
Tensione massima della porta di drenaggio:
20 V
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
250 mW
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23
Confezione:
Bobina
Configurazione:
Separare
Altezza:
1 mm
Lunghezza:
3 mm
Prodotto:
RF JFET
Tipo:
JFET
Larghezza:
1.4 mm
Marca:
Semiconduttori NXP
Transconduttanza diretta - Min:
0.0001 S
Tensione di interruzione gate-source:
0.8 V
Tipologia di prodotto:
Transistor RF JFET
Rds On - Resistenza Drain-Source:
-
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Parte # Alias:
933505270215
Unità di peso:
0.000282 oz
Tags
BF510, BF51, BF5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANSISTOR, JFET, N-CH, 20V, SOT-23; Breakdown Voltage Vbr: 20V; Zero Gate Voltage Drain Current Idss Min: 3mA; Zero Gate Voltage Drain Current Idss Max: 700µA; Gate-Source Cutoff Voltage Vgs(off) Max: 800mV; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: BF510 to 513; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Pin Configuration: 1 = gate; 2 = drain; 3 = source
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***roFlash
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
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Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di BF510,215 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,83 USD
0,83 USD
10
0,68 USD
6,82 USD
100
0,44 USD
44,00 USD
1000
0,35 USD
352,00 USD
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