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MRF6VP2600HR5

MRF6VP2600HR5
Mfr. #:
MRF6VP2600HR5
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors VHV6 600W 225MHZ NI1230
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRF6VP2600HR5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
110 V
Guadagno:
25.3 dB
Potenza di uscita:
600 W
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-1230
Confezione:
Bobina
Configurazione:
Dual
Altezza:
5.08 mm
Lunghezza:
41.28 mm
Frequenza operativa:
500 MHz
Serie:
MRF6VP2600H
Tipo:
MOSFET di potenza RF
Larghezza:
10.29 mm
Marca:
NXP / Freescale
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
10 V
Vgs th - Tensione di soglia gate-source:
3 V
Parte # Alias:
935319433178
Unità di peso:
0.464036 oz
Tags
MRF6VP26, MRF6VP2, MRF6VP, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,2 to 500 MHz, 600 W, Typ Gain in dB is 25 @ 225 MHz, 50 V, LDMOS, SOT1787
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V, CFM4F, RoHS
***ure Electronics
N-Channel 110 V 125 W Enhancement Mode Lateral Mosfet - NI-1230
***ark
Transistor; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:0.00009A; RF Transistor Case:375D; Gain:25dB; Gate-Source Voltage:10V; Operating Frequency Max:225MHz; Output Power, Pout:600W
***nell
RF FET, 110V, 500MHZ-2MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 500MHz; Operating Frequency Max: 2MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP2600H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
MRF6VP2600HR5
DISTI # V72:2272_07204071		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
RoHS: Compliant		23
  • 75000:$247.2100
  • 30000:$248.5500
  • 15000:$249.8900
  • 6000:$252.6100
  • 3000:$255.3400
  • 1000:$258.0600
  • 500:$260.7900
  • 250:$266.2500
  • 100:$270.6400
  • 50:$272.2500
  • 25:$276.3800
  • 10:$282.2900
  • 1:$290.7300
MRF6VP2600HR5
DISTI # MRF6VP2600HR5TR-ND		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$285.9014
MRF6VP2600HR5
DISTI # MRF6VP2600HR5CT-ND		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2In Stock
  • 1:$314.4100
MRF6VP2600HR5
DISTI # MRF6VP2600HR5DKR-ND		NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    MRF6VP2600HR5
    DISTI # 25767377    		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
    RoHS: Compliant    		23
    • 10:$282.2900
    • 1:$290.7300
    MRF6VP2600HR5
    DISTI # MRF6VP2600HR5    		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin NI-1230 T/R - Tape and Reel (Alt: MRF6VP2600HR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel    		Americas - 150
      MRF6VP2600HR5
      DISTI # 95M9593      		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, 375D-05, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:50µA,Power Dissipation Pd:-,Operating Frequency Min:2MHz,Operating Frequency Max:500MHz,RF Transistor Case:NI-1230,MSL:- RoHS Compliant: Yes0
        MRF6VP2600HR5
        DISTI # 61AC0768        		NXP SemiconductorsRF FET, 110V, 500MHZ-2MHZ, CASE 375D,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:500MHz,Operating Frequency Max:2MHz,RF Transistor Case:NI-1230,No. of Pins:4Pins,RoHS Compliant: Yes0
          MRF6VP2600HR5
          DISTI # 841-MRF6VP2600HR5          		NXP SemiconductorsRF MOSFET Transistors VHV6 600W 225MHZ NI1230
          RoHS: Compliant          		137
          • 1:$294.4700
          • 5:$289.9500
          • 10:$285.6300
          • 25:$279.4700
          • 50:$275.1800
          MRF6VP2600HR5Freescale SemiconductorRF Power Field-Effect Transistor
          RoHS: Compliant          		150
          • 1000:$282.8400
          • 500:$297.7300
          • 100:$309.9600
          • 25:$323.2500
          • 1:$348.1100
          MRF6VP2600HR5
          DISTI # MRF6VP2600HR5          		NXP SemiconductorsRF POWER TRANSISTOR
          RoHS: Compliant          		0
          • 50:$300.9500
          MRF6VP2600HR5
          DISTI # C1S233100269077          		NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
          RoHS: Compliant          		23
          • 10:$282.2900
          • 1:$290.7300
          MRF6VP2600HR5
          DISTI # 1806059          		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, 375D-05
          RoHS: Compliant          		0
          • 1:$465.9600
          • 5:$458.8000
          • 10:$451.9700
          • 25:$442.2200
          • 50:$435.4400
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          Disponibilità
          Azione:
          100
          Su ordine:
          2083
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