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NSBA114TDXV6T1G

NSBA114TDXV6T1G
Mfr. #:
NSBA114TDXV6T1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSBA114TDXV6T1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Dual
Polarità del transistor:
PNP
Resistenza di ingresso tipica:
10 kOhms
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-563-6
Guadagno base/collettore DC hfe min:
160
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
- 0.1 A
Corrente di picco del collettore CC:
100 mA
Pd - Dissipazione di potenza:
357 mW
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSBA114TDXV6
Confezione:
Bobina
Guadagno di corrente CC hFE Max:
160
Altezza:
0.55 mm
Lunghezza:
1.6 mm
Larghezza:
1.2 mm
Marca:
ON Semiconductor
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
4000
sottocategoria:
transistor
Unità di peso:
0.000106 oz
Tags
NSBA114TDX, NSBA114TD, NSBA114T, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
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Trans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R
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Brt Transistor, 50V, 10Kohm, Sot-563-6; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
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Complementary Bipolar Digital Transistor (BRT)
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Brt Transistor, 50V, 4.7Kohm, Sot--563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-Rohs Compliant: Yes
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Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
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***emi
Complementary Bipolar Digital Transistor (BRT)
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***r Electronics
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***emi
Dual PNP Bipolar Digital Transistor (BRT)
***Yang
Trans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel
***ponent Stockers USA
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
***ark
Brt Transistor, 50V, 4.7Kohm, Sot-563-6; Transistor Polarity:dual Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
NSBA114TDXV6T1G
DISTI # NSBA114TDXV6T1GOSCT-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1GOSTR-ND    		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 4000:$0.1040
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1G    		ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA114TDXV6T1G)
    RoHS: Compliant
    Min Qty: 8000
    Container: Reel    		Americas - 0
    • 80000:$0.0739
    • 40000:$0.0749
    • 24000:$0.0759
    • 16000:$0.0769
    • 8000:$0.0779
    NSBA114TDXV6T1G
    DISTI # NSBA114TDXV6T1G    		ON SemiconductorTrans Digital BJT PNP 50V 0.1A 6-Pin SOT-563 T/R - Bulk (Alt: NSBA114TDXV6T1G)
    RoHS: Compliant
    Min Qty: 3572
    Container: Bulk    		Americas - 0
    • 35720:$0.0859
    • 17860:$0.0879
    • 10716:$0.0889
    • 7144:$0.0899
    • 3572:$0.0909
    NSBA114TDXV6T1G
    DISTI # 42K2297    		ON SemiconductorBRT TRANSISTOR, 50V, 10KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:-,No. of Pins:6 PinRoHS Compliant: Yes0
    • 30000:$0.0780
    • 18000:$0.0860
    • 12000:$0.0930
    • 6000:$0.1040
    • 3000:$0.1190
    • 1:$0.1260
    NSBA114TDXV6T1G
    DISTI # 49X8914    		ON SemiconductorBRT TRANSISTOR, 50V, 10KOHM, SOT-563-6,Digital Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:-,No. of Pins:6 PinRoHS Compliant: Yes0
    • 2500:$0.1070
    • 1000:$0.1260
    • 500:$0.1550
    • 250:$0.1820
    • 100:$0.2160
    • 50:$0.2580
    • 25:$0.3090
    • 1:$0.4030
    NSBA114TDXV6T1G
    DISTI # 863-NSBA114TDXV6T1G    		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    RoHS: Compliant    		8000
    • 1:$0.3400
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 4000:$0.0930
    • 8000:$0.0870
    • 24000:$0.0800
    • 48000:$0.0770
    • 100000:$0.0740
    NSBA114TDXV6T1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
    RoHS: Compliant    		96000
    • 1000:$0.0900
    • 100:$0.1000
    • 500:$0.1000
    • 1:$0.1100
    • 25:$0.1100
    Immagine Parte # Descrizione
    NSBA114TDXV6T5G

    Mfr.#: NSBA114TDXV6T5G

    OMO.#: OMO-NSBA114TDXV6T5G

    		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114YDXV6T1G

    Mfr.#: NSBA114YDXV6T1G

    OMO.#: OMO-NSBA114YDXV6T1G

    		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114TF3T5G

    Mfr.#: NSBA114TF3T5G

    OMO.#: OMO-NSBA114TF3T5G

    		 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
    NSBA114EDXV6T5

    Mfr.#: NSBA114EDXV6T5

    OMO.#: OMO-NSBA114EDXV6T5

    		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
    NSBA114EDP6T5G , FDH3595

    Mfr.#: NSBA114EDP6T5G , FDH3595

    OMO.#: OMO-NSBA114EDP6T5G-FDH3595-1190

    		 Nuovo e originale
    NSBA114EDV6T1

    Mfr.#: NSBA114EDV6T1

    OMO.#: OMO-NSBA114EDV6T1-1190

    		 Nuovo e originale
    NSBA114EDXV6T5G

    Mfr.#: NSBA114EDXV6T5G

    OMO.#: OMO-NSBA114EDXV6T5G-ON-SEMICONDUCTOR

    		 TRANS 2PNP PREBIAS 0.5W SOT563
    NSBA114TDXV6T1G

    Mfr.#: NSBA114TDXV6T1G

    OMO.#: OMO-NSBA114TDXV6T1G-1190

    		 TRANS 2PNP PREBIAS 0.5W SOT563
    NSBA114YDP6T5G

    Mfr.#: NSBA114YDP6T5G

    OMO.#: OMO-NSBA114YDP6T5G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - Pre-Biased SOT-963 DUAL PBRT
    NSBA114EF3T5G

    Mfr.#: NSBA114EF3T5G

    OMO.#: OMO-NSBA114EF3T5G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
    Disponibilità
    Azione:
    Available
    Su ordine:
    1991
    Inserisci la quantità:
    Il prezzo attuale di NSBA114TDXV6T1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,34 USD
    0,34 USD
    10
    0,27 USD
    2,66 USD
    100
    0,14 USD
    14,40 USD
    1000
    0,11 USD
    108,00 USD
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