FGA40N65SMD

FGA40N65SMD
Mfr. #:
FGA40N65SMD
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 650V, 40A Field Stop IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA40N65SMD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA40N65SMD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3PN
Stile di montaggio:
Foro passante
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
2.5 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
349 W
Serie:
FGA40N65SMD
Confezione:
Tubo
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA40N65S, FGA40N65, FGA40N6, FGA40N, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***n
    M***n
    UK

    fast delivery

    2019-04-24
    M***v
    M***v
    RU

    Not checked yet, the price is excellent

    2019-07-09
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IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
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Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAx0N65 650V Field Stop IGBTs
ON Semiconductor FGAx0N65 650V Field Stop IGBTs enable designers to develop a highly reliable system design with higher input voltage while offering optimum performance where low conduction and switching losses are essential. This helps designers of solar power inverters, uninterruptible power supplies (UPS), and welding applications create designs that improve energy efficiency with heat and thermal regulation while keeping the component count low. These 650V IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution and a wide safe operating area.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Parte # Mfg. Descrizione Azione Prezzo
FGA40N65SMD
DISTI # V99:2348_06359631
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube409
  • 250:$2.0160
  • 100:$2.1770
  • 10:$2.4720
  • 1:$2.8689
FGA40N65SMD
DISTI # FGA40N65SMDOS-ND
ON SemiconductorIGBT 650V 80A 349W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
448In Stock
  • 1350:$2.1829
  • 900:$2.5649
  • 450:$2.8441
  • 10:$3.6230
  • 1:$4.0200
FGA40N65SMD
DISTI # 31312018
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube35550
  • 25650:$1.7940
  • 17100:$1.8657
  • 8550:$1.9168
  • 450:$2.1528
FGA40N65SMD
DISTI # 27607742
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube409
  • 250:$2.0160
  • 100:$2.1770
  • 10:$2.4720
  • 4:$2.8689
FGA40N65SMD
DISTI # FGA40N65SMD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA40N65SMD)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.7900
  • 900:$1.7900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGA40N65SMD
DISTI # FGA40N65SMD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA40N65SMD)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.1900
  • 10:€1.9900
  • 25:€1.8900
  • 50:€1.8900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.5900
FGA40N65SMD
DISTI # 95T0024
ON SemiconductorFSPIGBT TO3PN 40A 650V / TUBE0
  • 10000:$1.9200
  • 2500:$2.0400
  • 1000:$2.1300
  • 500:$2.5000
  • 100:$2.7600
  • 10:$3.3200
  • 1:$4.0900
FGA40N65SMD
DISTI # 512-FGA40N65SMD
ON SemiconductorIGBT Transistors 650V, 40A Field Stop IGBT
RoHS: Compliant
706
  • 1:$3.0800
  • 10:$2.6100
  • 100:$2.2700
  • 250:$2.1500
  • 500:$1.9300
FGA40N65SMD
DISTI # 8648782P
ON SemiconductorIGBT 650V 40A FIELD STOP TO3PN, TU8
  • 900:£1.4350
  • 450:£1.6000
  • 100:£1.6900
  • 20:£1.9400
FGA40N65SMDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
Europe - 210
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    Disponibilità
    Azione:
    614
    Su ordine:
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