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IPD65R190C7ATMA1

IPD65R190C7ATMA1
Mfr. #:
IPD65R190C7ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD65R190C7ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPD65R190C7ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
13 A
Rds On - Resistenza Drain-Source:
168 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
23 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
72 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Serie:
CoolMOS C7
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
11 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
54 ns
Tempo di ritardo di accensione tipico:
11 ns
Parte # Alias:
IPD65R190C7 SP000928648
Unità di peso:
0.139332 oz
Tags
IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO252-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descrizione Azione Prezzo
IPD65R190C7ATMA1
DISTI # V72:2272_06377199		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD65R190C7ATMA1
    DISTI # V36:1790_06377199    		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		0
    • 2500000:$1.3070
    • 1250000:$1.3090
    • 250000:$1.3970
    • 25000:$1.5270
    • 2500:$1.5480
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2475In Stock
    • 1000:$1.4664
    • 500:$1.7698
    • 100:$2.1541
    • 10:$2.6800
    • 1:$2.9800
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2475In Stock
    • 1000:$1.4664
    • 500:$1.7698
    • 100:$2.1541
    • 10:$2.6800
    • 1:$2.9800
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$1.2764
    • 2500:$1.3255
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD65R190C7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 15000:$1.1900
    • 2500:$1.2900
    IPD65R190C7ATMA1
    DISTI # SP000928648    		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R (Alt: SP000928648)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€1.0379
    • 15000:€1.1119
    • 10000:€1.1979
    • 5000:€1.2969
    • 2500:€1.5569
    IPD65R190C7ATMA1
    DISTI # 54X5226    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes5000
    • 1000:$1.3600
    • 500:$1.6500
    • 100:$1.8900
    • 10:$2.3500
    • 1:$2.7800
    IPD65R190C7ATMA1
    DISTI # 726-IPD65R190C7ATMA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7
    DISTI # 726-IPD65R190C7    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-3
    RoHS: Compliant    		5000
    • 2500:$1.9900
    • 1000:$2.0300
    • 500:$2.4600
    • 100:$2.8200
    • 10:$3.5100
    • 1:$4.1400
    IPD65R190C7ATMA1
    DISTI # 2420492    		Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-34900
    • 100:£1.7900
    • 10:£2.2300
    • 1:£2.9900
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1990
    Inserisci la quantità:
    Il prezzo attuale di IPD65R190C7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,75 USD
    2,75 USD
    10
    2,33 USD
    23,30 USD
    100
    1,87 USD
    187,00 USD
    500
    1,63 USD
    815,00 USD
    1000
    1,35 USD
    1 350,00 USD
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