IPB60R360P7ATMA1

Mfr. #:: IPB60R360P7ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET LOW POWER_NEW
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB60R360P7ATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: IPB60R360P7ATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 9 A

Rds On - Resistenza Drain-Source:: 305 mOhms

Vgs th - Tensione di soglia gate-source:: 3 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 13 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 41 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Tipo di transistor:: 1 N-Channel

Marca:: Tecnologie Infineon

Tempo di caduta:: 10 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 7 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 42 ns

Tempo di ritardo di accensione tipico:: 8 ns

Parte # Alias:: IPB60R360P7 SP001664948

Tags: IPB60R3, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R360P7ATMA1 Descrizione

***ure Electronics: Single N-Channel 600 V 360 mOhm CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) D2PAK T/R

***i-Key: MOSFET TO263-3

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 600V, 9A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.305Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes

***ineon: Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 9A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.305ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:41W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 600V, 9A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:9A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.305ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:41W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPB60R360P7ATMA1 Maggiori informazioni

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB60R360P7ATMA1 DISTI # V36:1790_18787580	Infineon Technologies AG	LOW POWER_NEW	0
IPB60R360P7ATMA1 DISTI # V72:2272_18787580	Infineon Technologies AG	LOW POWER_NEW	0
IPB60R360P7ATMA1 DISTI # IPB60R360P7ATMA1TR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.7335 5000:$0.7492 2000:$0.7780 1000:$0.8356
IPB60R360P7ATMA1 DISTI # IPB60R360P7ATMA1CT-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	500:$1.0388 100:$1.3356 10:$1.6620 1:$1.8400
IPB60R360P7ATMA1 DISTI # IPB60R360P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	500:$1.0388 100:$1.3356 10:$1.6620 1:$1.8400
IPB60R360P7ATMA1 DISTI # IPB60R360P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPB60R360P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.7539 2000:$0.7269 4000:$0.7009 6000:$0.6769 10000:$0.6649
IPB60R360P7ATMA1 DISTI # SP001664948	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001664948) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€0.9689 2000:€0.7929 4000:€0.7269 6000:€0.6709 10000:€0.6229
IPB60R360P7ATMA1 DISTI # 49AC7999	Infineon Technologies AG	MOSFET, N-CH, 600V, 9A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.305ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes	0	500:$0.9170 250:$0.9790 100:$1.0400 50:$1.1300 25:$1.2200 10:$1.3100 1:$1.5400
IPB60R360P7ATMA1 DISTI # 726-IPB60R360P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	397	1:$1.5400 10:$1.3100 100:$1.0400 500:$0.9170 1000:$0.7600 2000:$0.7080 5000:$0.6820 10000:$0.6550
IPB60R360P7ATMA1 DISTI # 2841647	Infineon Technologies AG	MOSFET, N-CH, 600V, 9A, TO-263 RoHS: Compliant	0	5000:$1.1700 1000:$1.2400 500:$1.3100 250:$1.5100 100:$1.7900 25:$2.2000 5:$2.5200
IPB60R360P7ATMA1 DISTI # 2841647	Infineon Technologies AG	MOSFET, N-CH, 600V, 9A, TO-263 RoHS: Compliant	165	500:£0.7210 250:£0.7690 100:£0.8170 25:£1.0300 5:£1.1300

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Disponibilità

Azione:: Available
Su ordine:: 1991
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Il prezzo attuale di IPB60R360P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,54 USD~~; ~~1,54 USD~~

10: ~~1,31 USD~~; ~~13,10 USD~~

100: ~~1,04 USD~~; ~~104,00 USD~~

500: ~~0,92 USD~~; ~~458,50 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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IPB60R360P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes