STGD3HF60HDT4

Mfr. #:: STGD3HF60HDT4
Produttore:: STMicroelectronics
Descrizione:: IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STGD3HF60HDT4 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: STGD3HF60HDT4 maggiori informazioni STGD3HF60HDT4 Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: DPAK

Stile di montaggio:: SMD/SMT

Tensione collettore-emettitore VCEO Max:: 600 V

Tensione di saturazione collettore-emettitore:: 2.95 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 7.5 A

Pd - Dissipazione di potenza:: 38 W

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Serie:: STGD3HF60HDT4

Confezione:: Bobina

Marca:: STMicroelectronics

Corrente di dispersione gate-emettitore:: 100 nA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 2500

sottocategoria:: IGBT

Unità di peso:: 0.009185 oz

Tags: STGD3, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD3HF60HDT4 Valutazioni e recensioni

M***v

Low amplifier, and delivery fast i am very pleased with my purchase thank you very much!!!

2019-06-29

V***v

Thank you!

2019-04-23

J***i

Delivery time = 35days. All OK

2019-06-23

Y***v

Long went, but came

2019-05-27

STGD3HF60HDT4 Descrizione

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

*** Stop Electro: Insulated Gate Bipolar Transistors

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

***ser: Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

***nell: IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STGD3HF60HDT4 DISTI # V72:2272_17751155	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.6324 500:$0.7349 250:$0.8218 100:$0.8665 25:$1.0640 10:$1.0681 1:$1.2080
STGD3HF60HDT4 DISTI # 497-10960-1-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2462In Stock	1000:$0.8181 500:$1.0127 100:$1.2075 10:$1.5240 1:$1.7000
STGD3HF60HDT4 DISTI # 497-10960-6-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2462In Stock	1000:$0.8181 500:$1.0127 100:$1.2075 10:$1.5240 1:$1.7000
STGD3HF60HDT4 DISTI # 497-10960-2-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.7155 2500:$0.7470
STGD3HF60HDT4 DISTI # 18933559	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	47500	2500:$0.7312
STGD3HF60HDT4 DISTI # 25931224	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.6324 500:$0.7349 250:$0.8218 100:$0.8665 25:$1.0640 11:$1.0681
STGD3HF60HDT4 DISTI # STGD3HF60HDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STGD3HF60HDT4) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6739 5000:$0.6419 10000:$0.6129 15000:$0.5859 25000:$0.5739
STGD3HF60HDT4 DISTI # 511-STGD3HF60HDT4	STMicroelectronics	IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM RoHS: Compliant	2487	1:$1.4800 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2500:$0.5990 10000:$0.5770
STGD3HF60HDT4	STMicroelectronics	RoHS: Compliant	Europe - 5000
STGD3HF60HDT4 DISTI # 2765163	STMicroelectronics	3/4.5 A, 600 V VERY FAST IGBT RoHS: Compliant	2055	1:$2.3500 10:$2.0000 100:$1.5400 500:$1.3600 1000:$1.0800 2500:$0.9490 10000:$0.9140
STGD3HF60HDT4 DISTI # 2765163	STMicroelectronics	3/4.5 A, 600 V VERY FAST IGBT RoHS: Compliant	2150	5:£1.0600 25:£0.9620 100:£0.7390 250:£0.6970 500:£0.6540
STGD3HF60HDT4 DISTI # C1S730200516961	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	250:$0.8218 100:$0.8665 10:$1.0681

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Disponibilità

Azione:: Available
Su ordine:: 1985
Inserisci la quantità:

Il prezzo attuale di STGD3HF60HDT4 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,48 USD~~; ~~1,48 USD~~

10: ~~1,26 USD~~; ~~12,60 USD~~

100: ~~0,97 USD~~; ~~96,80 USD~~

500: ~~0,86 USD~~; ~~428,00 USD~~

1000: ~~0,68 USD~~; ~~675,00 USD~~

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