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FGA120N30DTU

FGA120N30DTU
Mfr. #:
FGA120N30DTU
Produttore:
ON Semiconductor
Descrizione:
IGBT 300V 120A 290W TO3P
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA120N30DTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
FGA12, FGA1, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 300V 120A 290W TO3P
***ark
IGBT, PDP, 300V, TO-3P; Transistor type:IGBT; Voltage, Vces:300V; Current, Ic continuous a max:120A; Voltage, Vce sat max:1.4V; Power dissipation:290W; Package/Case:TO-3P; Current, Ic @ Vce sat:25A; Current, Icm pulsed:300A; Pin RoHS Compliant: Yes
***nell
IGBT, PDP, 300V, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic @ Vce Sat: 25A; Current Ic Continuous a Max: 120A; Current Temperature: 25°C; Fall Time tf: 130ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Junction to Case Thermal Resistance A: 0.43°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: With flywheel diode; Power Dissipation Max: 290W; Pulsed Current Icm: 300A; Rise Time: 270ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 300V
Parte # Mfg. Descrizione Azione Prezzo
FGA120N30DTU
DISTI # FGA120N30DTU-ND		ON SemiconductorIGBT 300V 120A 290W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA120N30DTU
    DISTI # 512-FGA120N30DTU    		ON SemiconductorIGBT Transistors 300V PDP IGBT
    RoHS: Compliant    		0
      FGA120N30DTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel
      RoHS: Compliant      		364
      • 1000:$1.3800
      • 500:$1.4500
      • 100:$1.5100
      • 25:$1.5800
      • 1:$1.7000
      Immagine Parte # Descrizione
      FGA120N30D

      Mfr.#: FGA120N30D

      OMO.#: OMO-FGA120N30D-1190

      		 Nuovo e originale
      FGA120N30DTU

      Mfr.#: FGA120N30DTU

      OMO.#: OMO-FGA120N30DTU-ON-SEMICONDUCTOR

      		 IGBT 300V 120A 290W TO3P
      FGA120N33D

      Mfr.#: FGA120N33D

      OMO.#: OMO-FGA120N33D-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      1000
      Inserisci la quantità:
      Il prezzo attuale di FGA120N30DTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,07 USD
      2,07 USD
      10
      1,97 USD
      19,66 USD
      100
      1,86 USD
      186,30 USD
      500
      1,76 USD
      879,75 USD
      1000
      1,66 USD
      1 656,00 USD
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