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IXYH100N65C3

IXYH100N65C3
Mfr. #:
IXYH100N65C3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 650V/200A XPT C3-Class TO-247
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYH100N65C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXYH100N65C3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
IGBT - Singolo
Serie
GenX3, XPT
Confezione
Tubo
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Nome depositato
XPT
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247 (IXYH)
Configurazione
Separare
Potenza-Max
830W
Reverse-Tempo di ripristino-trr
-
Corrente-Collettore-Ic-Max
200A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
PT
Corrente-Collettore-Impulsato-Icm
420A
Vce-su-Max-Vge-Ic
2.3V @ 15V, 70A
Energia di commutazione
2.15mJ (on), 840μJ (off)
Gate-Charge
164nC
Td-on-off-25°C
28ns/106ns
Condizione di test
400V, 50A, 3 Ohm, 15V
Pd-Power-Dissipazione
830 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Collettore-Emettitore-Tensione-VCEO-Max
650 V
Collettore-Emettitore-Saturazione-Tensione
1.85 V
Continuo-Collettore-Corrente-a-25-C
200 A
Gate-Emettitore-Corrente di dispersione
100 nA
Massima-tensione-gate-emettitore
30 V
Continuo-Collettore-Corrente-Ic-Max
200 A
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IXYH100N65C3
DISTI # V36:1790_07768386		Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND		IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube		316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3		IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3    		IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant    		28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
    Immagine Parte # Descrizione
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C

    		 Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3

    		 Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1

    		 IGBT Transistors 1700V/10A XPT IGBT w/ Diode
    IXyH100N65C3

    Mfr.#: IXyH100N65C3

    OMO.#: OMO-IXYH100N65C3

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH10N450CHV

    Mfr.#: IXYH10N450CHV

    OMO.#: OMO-IXYH10N450CHV-1190

    		 Nuovo e originale
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3-IXYS-CORPORATION

    		 IGBT
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH100N65C3

    Mfr.#: IXYH100N65C3

    OMO.#: OMO-IXYH100N65C3-IXYS-CORPORATION

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di IXYH100N65C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    7,18 USD
    7,18 USD
    10
    6,83 USD
    68,26 USD
    100
    6,47 USD
    646,65 USD
    500
    6,11 USD
    3 053,65 USD
    1000
    5,75 USD
    5 748,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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