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FQP2N80

FQP2N80
Mfr. #:
FQP2N80
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 800V 2.4A TO-220
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQP2N80 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
FQP2N, FQP2, FQP
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,2.4A I(D),to-220 Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel QFET® MOSFET 800V, 2.4A, 6.3Ω
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):6.3ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:85W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Alternate Case Style:SOT-78B; On State Resistance Max:6.3ohm; Pulse Current Idm:9.6A; Voltage Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descrizione Azione Prezzo
FQP2N80
DISTI # V36:1790_06301280		ON SemiconductorQF 800V 6.3OHM TO2200
  • 1000000:$0.4459
  • 500000:$0.4463
  • 100000:$0.4871
  • 10000:$0.5650
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80-ND		ON SemiconductorMOSFET N-CH 800V 2.4A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.5783
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.4239
  • 500:€0.4329
  • 100:€0.4469
  • 50:€0.4579
  • 25:€0.5429
  • 10:€0.6539
  • 1:€0.8409
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5799
  • 2660:$0.5939
  • 1596:$0.6019
  • 1064:$0.6099
  • 532:$0.6139
FQP2N80
DISTI # FQP2N80		ON SemiconductorTrans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N80)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.4539
  • 6000:$0.4649
  • 4000:$0.4709
  • 2000:$0.4769
  • 1000:$0.4799
FQP2N80
DISTI # 512-FQP2N80		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		988
  • 1:$1.2000
  • 10:$1.0200
  • 100:$0.7900
  • 500:$0.6980
  • 1000:$0.5510
  • 2000:$0.4890
  • 10000:$0.4710
FQP2N80ON SemiconductorPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3000
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3621
  • 1000:$0.5400
  • 500:$0.5700
  • 100:$0.5900
  • 25:$0.6200
  • 1:$0.6600
FQP2N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		1000
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    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
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