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STGWA40M120DF3

STGWA40M120DF3
Mfr. #:
STGWA40M120DF3
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGWA40M120DF3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGWA40M120DF3 maggiori informazioni STGWA40M120DF3 Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
1.85 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
468 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
STGWA40M120DF3
Confezione:
Tubo
Corrente continua del collettore Ic Max:
40 A
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
600
sottocategoria:
IGBT
Unità di peso:
1.340411 oz
Tags
STGWA40, STGWA4, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
***ronik
IGBT 1200V 40A 1,85V TO-247 LL
***ment14 APAC
IGBT, SINGLE, 1.2KV, 80A, TO-247-3
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
Parte # Mfg. Descrizione Azione Prezzo
STGWA40M120DF3
DISTI # V99:2348_17652415		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		440
  • 500:$6.4630
  • 250:$7.1960
  • 100:$7.4310
  • 50:$7.9900
  • 25:$8.3350
  • 10:$8.8140
  • 1:$10.5259
STGWA40M120DF3
DISTI # V36:1790_06560807		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGWA40M120DF3
    DISTI # 497-15003-5-ND    		STMicroelectronicsIGBT 1200V 80A 468W TO-247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		87In Stock
    • 510:$7.3238
    • 120:$8.4105
    • 30:$9.6863
    • 10:$10.1590
    • 1:$11.2500
    STGWA40M120DF3
    DISTI # 25950169    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		440
    • 500:$6.9477
    • 250:$7.7357
    • 100:$7.9883
    • 50:$8.5892
    • 25:$8.9601
    • 10:$9.4750
    • 2:$10.2866
    STGWA40M120DF3
    DISTI # 30596763    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		10
    • 10:$6.8723
    • 4:$6.9615
    STGWA40M120DF3
    DISTI # STGWA40M120DF3    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGWA40M120DF3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 250:€3.6800
    • 100:€5.0100
    • 50:€5.3700
    • 10:€5.7600
    • 5:€6.6700
    • 1:€7.1500
    STGWA40M120DF3
    DISTI # STGWA40M120DF3    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGWA40M120DF3)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
    • 30000:$2.6316
    • 15000:$2.7027
    • 6000:$2.7778
    • 3000:$2.8986
    • 1800:$3.0303
    • 1200:$3.1746
    • 600:$3.3333
    STGWA40M120DF3
    DISTI # STGWA40M120DF3    		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA40M120DF3)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 6000:$5.7471
    • 3600:$5.8670
    • 2400:$6.1391
    • 1200:$6.4286
    • 600:$6.7466
    STGWA40M120DF3
    DISTI # 42Y1009    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247-3,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:468W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes10
      STGWA40M120DF3
      DISTI # 511-STGWA40M120DF3      		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
      RoHS: Compliant      		146
      • 1:$10.7000
      • 10:$9.6700
      • 25:$9.2200
      • 100:$8.0100
      • 250:$7.6500
      • 500:$6.9700
      • 1000:$6.0700
      STGWA40M120DF3STMicroelectronics 365
        STGWA40M120DF3
        DISTI # 2470029        		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247-3
        RoHS: Compliant        		10
        • 1000:$9.3400
        • 500:$10.7100
        • 250:$11.7700
        • 100:$12.3200
        • 25:$14.1700
        • 10:$14.8700
        • 1:$16.4500
        STGWA40M120DF3
        DISTI # 2470029        		STMicroelectronicsIGBT, SINGLE, 1.2KV, 80A, TO-247-3
        RoHS: Compliant        		10
        • 100:£6.2400
        • 50:£6.7100
        • 10:£7.1700
        • 5:£8.3200
        • 1:£8.8800
        STGWA40M120DF3STMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
        RoHS: Compliant        		Europe - 600
          STGWA40M120DF3
          DISTI # IGBT2613          		STMicroelectronicsIGBT 1200V 40A 1,85VTO-247 LLStock DE - 0Stock HK - 0Stock US - 0
          • 600:$5.9900
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          Disponibilità
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          Su ordine:
          2109
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          Il prezzo attuale di STGWA40M120DF3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
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          est. Prezzo
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          10,70 USD
          10,70 USD
          10
          9,67 USD
          96,70 USD
          25
          9,22 USD
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          100
          8,01 USD
          801,00 USD
          250
          7,65 USD
          1 912,50 USD
          500
          6,97 USD
          3 485,00 USD
          1000
          6,07 USD
          6 070,00 USD
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