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SIA416DJ-T1-GE3

SIA416DJ-T1-GE3
Mfr. #:
SIA416DJ-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 100V 11.3A SC70-6L
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIA416DJ-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SIA41, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA416DJ-T1-GE3 N-channel MOSFET Transistor; 11.3 A; 100 V; 6-Pin PowerPAK SC-70
***Components
In a Pack of 20, N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3
***ure Electronics
N-Channel 100 V 83 mOhm 3.5 W TrenchFET Power Mosfet - PowerPAK SC-70-6L
***et Europe
Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
***ical
Trans MOSFET N-CH 100V 4.8A
***i-Key
MOSFET N-CH 100V 11.3A SC70-6L
***
N-CH 100V (D-S) MOSFET
***ronik
N-CH 100V 11,3A 68mOhm PPAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; No. Of Pins:6Pins Rohs Compliant: No
***nell
MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 11.3A, PPAKSC70-6; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:19W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Parte # Mfg. Descrizione Azione Prezzo
SIA416DJ-T1-GE3
DISTI # V72:2272_09216729		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		3000
  • 3000:$0.3442
  • 1000:$0.3726
  • 500:$0.4302
  • 250:$0.4670
  • 100:$0.5188
  • 25:$0.6545
  • 10:$0.7504
  • 1:$0.9251
SIA416DJ-T1-GE3
DISTI # V36:1790_09216729		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		0
  • 3000000:$0.2945
  • 1500000:$0.2947
  • 300000:$0.3069
  • 30000:$0.3258
  • 3000:$0.3289
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1524In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1524In Stock
  • 1000:$0.3115
  • 500:$0.3893
  • 100:$0.4925
  • 10:$0.6420
  • 1:$0.7300
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 11.3A SC70-6L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 30000:$0.2394
  • 15000:$0.2457
  • 6000:$0.2551
  • 3000:$0.2741
SIA416DJ-T1-GE3
DISTI # 32404542		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		3000
  • 28:$0.9251
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R (Alt: SIA416DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2179
  • 18000:€0.2339
  • 12000:€0.2539
  • 6000:€0.2949
  • 3000:€0.4319
SIA416DJ-T1-GE3
DISTI # SIA416DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA416DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2308
  • 18000:$0.2371
  • 12000:$0.2439
  • 6000:$0.2542
  • 3000:$0.2620
SIA416DJ-T1-GE3
DISTI # 99W9412		Vishay IntertechnologiesMOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V0
  • 50000:$0.2330
  • 30000:$0.2430
  • 20000:$0.2610
  • 10000:$0.2790
  • 5000:$0.3030
  • 1:$0.3100
SIA416DJ-T1-GE3
DISTI # 19X1926		Vishay IntertechnologiesMOSFET Transistor, N Channel, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V RoHS Compliant: Yes668
  • 2500:$0.3160
  • 1000:$0.3860
  • 500:$0.4230
  • 100:$0.4600
  • 50:$0.5040
  • 25:$0.5490
  • 10:$0.5940
  • 1:$0.7340
SIA416DJ-T1-GE3.
DISTI # 30AC0108		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:4.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.068ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power Dissipation Pd:19W,No. of Pins:6Pins RoHS Compliant: No0
  • 50000:$0.2330
  • 30000:$0.2430
  • 20000:$0.2610
  • 10000:$0.2790
  • 5000:$0.3030
  • 1:$0.3100
SIA416DJ-T1-GE3
DISTI # 70617011		Vishay SiliconixSIA416DJ-T1-GE3 N-channel MOSFET Transistor,11.3 A,100 V,6-Pin PowerPAK SC-70
RoHS: Compliant		0
  • 300:$0.3500
  • 600:$0.3200
  • 1500:$0.2900
  • 3000:$0.2800
SIA416DJ-T1-GE3
DISTI # 78-SIA416DJ-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant		5458
  • 1:$0.7100
  • 10:$0.5740
  • 100:$0.4350
  • 500:$0.3600
  • 1000:$0.2880
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
  • 24000:$0.2250
SIA416DJ-T1-GE3
DISTI # 8181441P		Vishay IntertechnologiesTRANS MOSFET N-CH 100V 4.8A, RL10400
  • 200:£0.2140
  • 100:£0.2320
SIA416DJ-T1-GE3
DISTI # TMOS2344		Vishay IntertechnologiesN-CH 100V 11,3A 68mOhm PPAK
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 3000:$0.2337
SIA416DJ-T1-GE3
DISTI # 2364067		Vishay IntertechnologiesMOSFET, N-CH, 100V, 11.3A, PPAKSC70-6
RoHS: Compliant		533
  • 1000:$0.4700
  • 500:$0.5870
  • 100:$0.7430
  • 10:$0.9670
  • 1:$1.1000
SIA416DJ-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant		Americas - 33000
  • 3000:$0.2610
  • 6000:$0.2440
  • 12000:$0.2350
SIA416DJ-T1-GE3
DISTI # 2364067		Vishay IntertechnologiesMOSFET, N-CH, 100V, 11.3A, PPAKSC70-6613
  • 500:£0.3240
  • 250:£0.3820
  • 100:£0.4390
  • 10:£0.6210
  • 1:£0.7480
Immagine Parte # Descrizione
SIA416DJ-T1-GE3

Mfr.#: SIA416DJ-T1-GE3

OMO.#: OMO-SIA416DJ-T1-GE3

 MOSFET 100V Vds 20V Vgs PowerPAK SC-70
SIA416DJ-T4-GE3

Mfr.#: SIA416DJ-T4-GE3

OMO.#: OMO-SIA416DJ-T4-GE3-1190

 Nuovo e originale
SIA416DJ-T1-GE3

Mfr.#: SIA416DJ-T1-GE3

OMO.#: OMO-SIA416DJ-T1-GE3-VISHAY

 MOSFET N-CH 100V 11.3A SC70-6L
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di SIA416DJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,35 USD
0,35 USD
10
0,33 USD
3,29 USD
100
0,31 USD
31,15 USD
500
0,29 USD
147,10 USD
1000
0,28 USD
276,90 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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