SPB17N80C3

Mfr. #:: SPB17N80C3
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPB17N80C3 Scheda dati
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Maggiori informazioni:: SPB17N80C3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PG-TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 800 V

Id - Corrente di scarico continua:: 17 A

Rds On - Resistenza Drain-Source:: 290 mOhms

Vgs th - Tensione di soglia gate-source:: 2.1 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 88 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 227 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: CoolMOS

Confezione:: Bobina

Altezza:: 4.4 mm

Lunghezza:: 10 mm

Serie:: CoolMOS C3

Tipo di transistor:: 1 N-Channel

Larghezza:: 9.25 mm

Marca:: Tecnologie Infineon

Tempo di caduta:: 12 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 15 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 72 ns

Tempo di ritardo di accensione tipico:: 25 ns

Parte # Alias:: SP000013370 SPB17N80C3ATMA1 SPB17N8C3XT

Unità di peso:: 0.139332 oz

Tags: SPB17N80C3, SPB17N, SPB17, SPB1, SPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPB17N80C3 Descrizione

***Components: N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1

***ure Electronics: Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 T/R

***p One Stop Global: Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263

*** Source Electronics: MOSFET N-CH 800V 17A D2PAK

***ronik: N-CH 800V 17A 290mOhm TO263-3

***et: LOW POWER_PRICE/PERFORM

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; No. Of Pins:3Pins Rohs Compliant: Yes

***ineon: 800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

***ment14 APAC: Prices include import duty and tax. MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:17A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:17A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.25ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:17A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:800V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET

SPB17N80C3 Maggiori informazioni

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPB17N80C3ATMA1 DISTI # SPB17N80C3ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 17A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$2.7378
SPB17N80C3ATMA1 DISTI # SPB17N80C3ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 17A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$3.3436 100:$4.1292 10:$5.0360 1:$5.6400
SPB17N80C3ATMA1 DISTI # SPB17N80C3ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 17A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$3.3436 100:$4.1292 10:$5.0360 1:$5.6400
SPB17N80C3 DISTI # C1S322000116081	Infineon Technologies AG	Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 RoHS: Compliant	3	1:$4.4500
SPB17N80C3 DISTI # SPB17N80C3ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB17N80C3ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.4900 2000:$2.3900 4000:$2.2900 6000:$2.1900 10000:$2.1900
SPB17N80C3 DISTI # SPB17N80C3	Infineon Technologies AG	Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 (Alt: SPB17N80C3) RoHS: Compliant Min Qty: 1000	Asia - 0
SPB17N80C3 DISTI # SP000013370	Infineon Technologies AG	Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 (Alt: SP000013370) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€2.2900 2000:€2.2900 4000:€2.1900 6000:€2.0900 10000:€1.9900
SPB17N80C3ATMA1 DISTI # 33P8201	Infineon Technologies AG	MOSFET, N CHANNEL, 800V, 17A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$4.7100 10:$4.0000 25:$3.8200 50:$3.6500 100:$3.4700 250:$3.2900 500:$2.9600
SPB17N80C3ATMA1. DISTI # 26AC3953	Infineon Technologies AG	LOW POWER_LEGACY , ROHS COMPLIANT: YES	0	1:$2.4900 2000:$2.3900 4000:$2.2900 6000:$2.1900
SPB17N80C3 DISTI # 726-SPB17N80C3	Infineon Technologies AG	MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 RoHS: Compliant	0	1:$4.7100 10:$4.0000 100:$3.4700 250:$3.2900 500:$2.9600 1000:$2.4900
SPB17N80C3ATMA1 DISTI # 726-SPB17N80C3ATMA1	Infineon Technologies AG	MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 RoHS: Compliant	0	1:$4.7100 10:$4.0000 100:$3.4700 250:$3.2900 500:$2.9600 1000:$2.4900
SPB17N80C3ATMA1 DISTI # 7528482	Infineon Technologies AG	MOSFET N-CHANNEL 800V 17A COOLMOS TO263, EA	33	1:£3.4600 10:£2.4600 50:£2.4000 250:£2.2600 500:£2.0300
SPB17N80C3	Infineon Technologies AG		730
SPB17N80C3	Infineon Technologies AG	17 A, 800 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	240	196:$4.5705 46:$5.1245 1:$8.3100
SPB17N80C3 DISTI # TMOSP8687	Infineon Technologies AG	N-CH 800V17A290mOhm TO263-3 RoHS: Compliant	Stock DE - 0Stock US - 0	1000:$3.6800
SPB17N80C3	Infineon Technologies AG	INSTOCK	20472
SPB17N80C3ATMA1 DISTI # 1664102RL	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	0	1:$7.4600 10:$6.3400 100:$5.5000 250:$5.2100 500:$4.6900 1000:$3.9400 2000:$3.7500 5000:$3.6200
SPB17N80C3ATMA1 DISTI # 1664102	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	0	1:$7.4600 10:$6.3400 100:$5.5000 250:$5.2100 500:$4.6900 1000:$3.9400 2000:$3.7500 5000:$3.6200
SPB17N80C3	Infineon Technologies AG	800V,17A,N channel Power MOSFET	50	1:$4.0300 100:$3.3600 500:$2.9600 1000:$2.8800
SPB17N80C3ATMA1 DISTI # 1664102	Infineon Technologies AG	MOSFET, N, TO-263 RoHS: Compliant	0	1:£4.3700 10:£3.0300 100:£2.9400

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Disponibilità

Azione:: Available
Su ordine:: 1986
Inserisci la quantità:

Il prezzo attuale di SPB17N80C3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~4,70 USD~~; ~~4,70 USD~~

10: ~~4,00 USD~~; ~~40,00 USD~~

100: ~~3,46 USD~~; ~~346,00 USD~~

250: ~~3,29 USD~~; ~~822,50 USD~~

500: ~~2,95 USD~~; ~~1 475,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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SPB17N80C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes