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BSZ0501NSIATMA1

BSZ0501NSIATMA1
Mfr. #:
BSZ0501NSIATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET LV POWER MOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ0501NSIATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSDSON-8
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
3.3 mm
Serie:
OptiMOS 5
Larghezza:
3.3 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Parte # Alias:
BSZ0501NSI SP001281638
Tags
BSZ050, BSZ05, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSZ0501NSI series 30V 40A 2.0 mOhm N-Ch S3O8 OptiMOS™ 5
***ineon SCT
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
Parte # Mfg. Descrizione Azione Prezzo
BSZ0501NSIATMA1
DISTI # V36:1790_13994219		Infineon Technologies AGTrans MOSFET N-CH 30V 40A T/R
RoHS: Compliant		125000
  • 10000:$0.5427
  • 5000:$0.5701
BSZ0501NSIATMA1
DISTI # V72:2272_13994219		Infineon Technologies AGTrans MOSFET N-CH 30V 40A T/R
RoHS: Compliant		4890
  • 3000:$0.5977
  • 1000:$0.6042
  • 500:$0.7711
  • 250:$0.8804
  • 100:$0.8895
  • 25:$1.1658
  • 10:$1.1776
  • 1:$1.5227
BSZ0501NSIATMA1
DISTI # BSZ0501NSIATMA1-ND		Infineon Technologies AGMOSFET N-CH 30V 25A 8SON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.5988
BSZ0501NSIATMA1
DISTI # 32435253		Infineon Technologies AGTrans MOSFET N-CH 30V 40A T/R
RoHS: Compliant		125000
  • 5000:$0.5701
BSZ0501NSIATMA1
DISTI # 33708261		Infineon Technologies AGTrans MOSFET N-CH 30V 40A T/R
RoHS: Compliant		5000
  • 5000:$0.5140
BSZ0501NSIATMA1
DISTI # 31226072		Infineon Technologies AGTrans MOSFET N-CH 30V 40A T/R
RoHS: Compliant		4890
  • 3000:$0.5977
  • 1000:$0.6042
  • 500:$0.7711
  • 250:$0.8804
  • 100:$0.8895
  • 25:$1.1658
  • 12:$1.1776
BSZ0501NSIATMA1
DISTI # BSZ0501NSIATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8SON - Tape and Reel (Alt: BSZ0501NSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.5439
  • 30000:$0.5539
  • 20000:$0.5739
  • 10000:$0.5949
  • 5000:$0.6169
BSZ0501NSIATMA1
DISTI # SP001281638		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8SON (Alt: SP001281638)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.5169
  • 30000:€0.5519
  • 20000:€0.6339
  • 10000:€0.7589
  • 5000:€0.9049
BSZ0501NSIATMA1
DISTI # 726-BSZ0501NSIATMA1		Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant		4950
  • 1:$1.4000
  • 10:$1.2000
  • 100:$0.9220
  • 500:$0.8150
  • 1000:$0.6440
  • 5000:$0.5710
  • 10000:$0.5490
Immagine Parte # Descrizione
NSR05T40P2T5G

Mfr.#: NSR05T40P2T5G

OMO.#: OMO-NSR05T40P2T5G

 Schottky Diodes & Rectifiers 0.5 A 40 V Schottky
NSR05T40P2T5G

Mfr.#: NSR05T40P2T5G

OMO.#: OMO-NSR05T40P2T5G-ON-SEMICONDUCTOR

 Schottky Diodes & Rectifiers 0.5 A 40 V Schottky
XAL7030-601MEB

Mfr.#: XAL7030-601MEB

OMO.#: OMO-XAL7030-601MEB-1190

 RoHS (ship within 1day)
Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di BSZ0501NSIATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,40 USD
1,40 USD
10
1,20 USD
12,00 USD
100
0,92 USD
92,20 USD
500
0,82 USD
407,50 USD
1000
0,64 USD
644,00 USD
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