IPI029N06NAKSA1

Mfr. #:: IPI029N06NAKSA1
Produttore:: Infineon Technologies
Descrizione:: Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPI029N06NAKSA1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: IPI029N06

Confezione: Tubo

Alias parziali: IPI029N06N IPI029N06NXK SP000962134

Unità di peso: 0.084199 oz

Stile di montaggio: Foro passante

Nome depositato: OptiMOS

Pacchetto-Custodia: TO-262-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 136 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 8 ns

Ora di alzarsi: 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 100 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 2.8 V

Rds-On-Drain-Source-Resistenza: 2.9 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 30 ns

Tempo di ritardo all'accensione tipico: 17 ns

Qg-Gate-Carica: 56 nC

Transconduttanza diretta-Min: 160 S

Tags: IPI02, IPI0, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI029N06NAKSA1 Descrizione

***ical: Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube

***p One Stop Global: Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262

***et: Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube

***i-Key: MOSFET N-CH 60V 24A TO262-3

***ronik: N-CH 60V 100A 2,9mOhm TO262-3

***ark: Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPI029N06NAKSA1 Maggiori informazioni

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPI029N06NAKSA1 DISTI # 29709233	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	1000	500:$1.0464 100:$1.1904 15:$1.4880
IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 60V 24A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube	417In Stock	1000:$0.9870 500:$1.1912 100:$1.5315 10:$1.9060 1:$2.1100
IPI029N06NAKSA1 DISTI # C1S322000334748	Infineon Technologies AG	Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	1000	1000:$0.9020 500:$1.1700 100:$1.2800 25:$1.5600 5:$1.9200
IPI029N06NAKSA1 DISTI # SP000962134	Infineon Technologies AG	MV POWER MOS (Alt: SP000962134) RoHS: Compliant Min Qty: 1	Europe - 56000	1:€1.2629 10:€0.9849 25:€0.8799 50:€0.8009 100:€0.7769 500:€0.7609 1000:€0.7509
IPI029N06NAKSA1 DISTI # IPI029N06NAKSA1	Infineon Technologies AG	MV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$0.7129 1000:$0.6869 2000:$0.6619 3000:$0.6399 5000:$0.6279
IPI029N06NAKSA1 DISTI # 34AC1699	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes	459	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900
IPI029N06NAKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	20868	1000:$1.1200 500:$1.1800 100:$1.2300 25:$1.2800 1:$1.3800
IPI029N06N DISTI # 726-IPI029N06N	Infineon Technologies AG	MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant	485	1:$1.8300 10:$1.5500 100:$1.2400 500:$1.0900
IPI029N06NAKSA1 DISTI # 726-IPI029N06NAKSA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A I2PAK-3 RoHS: Compliant	315	1:$1.8300 10:$1.5500 100:$1.2400
IPI029N06NAKSA1 DISTI # 2781091	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant	459	1:£1.9300 10:£1.5300 100:£1.2300 250:£1.0900 500:£0.9560
IPI029N06NAKSA1 DISTI # 2781091	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, TO-262 RoHS: Compliant	459	1:$3.4000 10:$2.9600 100:$2.4100 250:$2.0400 500:$1.7600 1000:$1.6700
IPI029N06NAKSA1 DISTI # XSKDRABV0021253	INF	RoHS: Compliant	500	500:$1.4600

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPI029N06N OMO.#: OMO-IPI029N06N	MOSFET N-Ch 60V 100A I2PAK-3
	Mfr.#: IPI029N06NAKSA1 OMO.#: OMO-IPI029N06NAKSA1	MOSFET N-Ch 60V 100A I2PAK-3
	Mfr.#: IPI029N06N OMO.#: OMO-IPI029N06N-1190	MOSFET N-Ch 60V 100A I2PAK-3
	Mfr.#: IPI029N06NAKSA1 OMO.#: OMO-IPI029N06NAKSA1-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3

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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,94 USD~~; ~~0,94 USD~~

10: ~~0,89 USD~~; ~~8,95 USD~~

100: ~~0,85 USD~~; ~~84,77 USD~~

500: ~~0,80 USD~~; ~~400,30 USD~~

1000: ~~0,75 USD~~; ~~753,50 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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IPI02 21
IPI0 121
IPI 485

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IPI029N06NAKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes