BSG0810NDIATMA1

BSG0810NDIATMA1
Mfr. #:
BSG0810NDIATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 25V 19A/39A 8TISON
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSG0810NDIATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Array
Serie
OptiMOS
Confezione
Nastro e bobina (TR)
Alias ​​parziali
BSG0810NDI SP001241674
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 155°C (TJ)
Tipo di montaggio
Montaggio superficiale
Pacchetto-dispositivo-fornitore
PG-TISON-8
Tipo FET
2 N-Channel (Dual) Asymmetrical
Potenza-Max
2.5W
Drain-to-Source-Voltage-Vdss
25V
Ingresso-Capacità-Ciss-Vds
*
Funzione FET
Logic Level Gate, 4.5V Drive
Corrente-Continuo-Scarico-Id-25°C
19A, 39A
Rds-On-Max-Id-Vgs
3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Carica-Qg-Vgs
8.4nC @ 4.5V
Tags
BSG0810NDI, BSG0810, BSG08, BSG0, BSG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
OptiMOS™ 5 Power Block is a leadless SMD package in a 5, PG-TISON-8, RoHS
***et
Transistor MOSFET Array Dual N-CH 25V 50A 8-Pin TISON T/R
***ical
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
***i-Key
MOSFET 2N-CH 25V 19A/39A 8TISON
***ineon
OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator
Parte # Mfg. Descrizione Azione Prezzo
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1-ND
Infineon Technologies AGMOSFET 2N-CH 25V 19A/39A 8TISON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.1211
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0810NDIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.1289
  • 10000:$1.0879
  • 20000:$1.0489
  • 30000:$1.0139
  • 50000:$0.9959
BSG0810NDIATMA1
DISTI # BSG0810NDI
Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R (Alt: BSG0810NDI)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
  • 5000:$1.1200
  • 10000:$1.0889
  • 15000:$1.0595
  • 25000:$1.0316
  • 50000:$1.0182
  • 125000:$1.0051
  • 250000:$0.9924
BSG0810NDIATMA1
DISTI # 726-BSG0810NDIATMA1
Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant
4695
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3800
  • 1000:$1.1400
  • 2500:$1.0600
  • 5000:$1.0200
Immagine Parte # Descrizione
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1

MOSFET LV POWER MOS
BSG0810ND

Mfr.#: BSG0810ND

OMO.#: OMO-BSG0810ND-1190

Nuovo e originale
BSG0810NDI

Mfr.#: BSG0810NDI

OMO.#: OMO-BSG0810NDI-1190

Nuovo e originale
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 25V 19A/39A 8TISON
BSG0810NDIATMA1-CUT TAPE

Mfr.#: BSG0810NDIATMA1-CUT TAPE

OMO.#: OMO-BSG0810NDIATMA1-CUT-TAPE-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di BSG0810NDIATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,41 USD
1,41 USD
10
1,34 USD
13,41 USD
100
1,27 USD
127,01 USD
500
1,20 USD
599,75 USD
1000
1,13 USD
1 129,00 USD
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