GS8161E32DD-333I

GS8161E32DD-333I
Mfr. #:
GS8161E32DD-333I
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 512K x 32 16M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS8161E32DD-333I Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS8161E32DD-333I maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
Dimensione della memoria:
18 Mbit
Organizzazione:
512 k x 32
Orario di accesso:
4.5 ns
Frequenza massima di clock:
333 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
280 mA, 335 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS8161E32DD
Tipo:
Conduttura DCD/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS8161E32DD-33, GS8161E32DD-3, GS8161E32DD, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 32 4.5ns/2.5ns 165-Pin FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et Europe
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 512KX36, 0.45NS, CMOS,
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (13x15 mm), RoHS
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 1M x 18 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***ark
18Mb, QUAD (Burst of 2), Sync SRAM, 1M x 18, 165 Ball FBGA (15x17 mm), RoHS
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 165-Pin FBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS8161E32DD-250

Mfr.#: GS8161E32DD-250

OMO.#: OMO-GS8161E32DD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGD-333

Mfr.#: GS8161E36DGD-333

OMO.#: OMO-GS8161E36DGD-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-333I

Mfr.#: GS8161E36DGD-333I

OMO.#: OMO-GS8161E36DGD-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DD-200

Mfr.#: GS8161E36DD-200

OMO.#: OMO-GS8161E36DD-200

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGD-150

Mfr.#: GS8161E36DGD-150

OMO.#: OMO-GS8161E36DGD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DGT-333IV

Mfr.#: GS8161E36DGT-333IV

OMO.#: OMO-GS8161E36DGT-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-333

Mfr.#: GS8161E32DGT-333

OMO.#: OMO-GS8161E32DGT-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGD-200IV

Mfr.#: GS8161E32DGD-200IV

OMO.#: OMO-GS8161E32DGD-200IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-150IV

Mfr.#: GS8161E36DD-150IV

OMO.#: OMO-GS8161E36DD-150IV

SRAM 1.8/2.5V 512K x 36 18M
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di GS8161E32DD-333I è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
36
21,64 USD
779,04 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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