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IXFB52N90P

IXFB52N90P
Mfr. #:
IXFB52N90P
Produttore:
Littelfuse
Descrizione:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFB52N90P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFB52N90P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFB52N90
Confezione
Tubo
Unità di peso
0.373904 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
1.25 kW
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
42 ns
Ora di alzarsi
80 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
52 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.5 V to 6.5 V
Rds-On-Drain-Source-Resistenza
160 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
95 ns
Tempo di ritardo all'accensione tipico
63 ns
Qg-Gate-Carica
308 nC
Transconduttanza diretta-Min
35 S
Modalità canale
Aumento
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,52A,PLUS264
***th Star Micro
MOSFET N-CH TO-264
***ark
N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Transistor Polarity:n Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:900V; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pinsrohs Compliant: Yes
***nell
MOSFET,N CH,900V,52A,PLUS264; Transistor Polarity:N Channel; Current Id Max:52A; Drain Source Voltage Vds:900V; On State Resistance:160mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:1.25kW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXFB52N90P
DISTI # IXFB52N90P-ND		IXYS CorporationMOSFET N-CH TO-264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$23.4684
IXFB52N90P
DISTI # 747-IXFB52N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		0
  • 25:$21.3400
  • 50:$20.4300
  • 100:$19.8300
  • 250:$18.2000
IXFB52N90P
DISTI # 1829764		IXYS CorporationMOSFET,N CH,900V,52A,PLUS264
RoHS: Compliant		0
  • 1:£16.1400
  • 5:£15.9100
  • 10:£15.6900
  • 50:£15.4600
  • 100:£13.7700
Immagine Parte # Descrizione
IXFB50N80Q2

Mfr.#: IXFB50N80Q2

OMO.#: OMO-IXFB50N80Q2

 MOSFET 50 Amps 800V
IXFB52N90P

Mfr.#: IXFB52N90P

OMO.#: OMO-IXFB52N90P

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFB50N80Q2

Mfr.#: IXFB50N80Q2

OMO.#: OMO-IXFB50N80Q2-IXYS-CORPORATION

 MOSFET 50 Amps 800V
IXFB52N90P

Mfr.#: IXFB52N90P

OMO.#: OMO-IXFB52N90P-IXYS-CORPORATION

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di IXFB52N90P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
27,30 USD
27,30 USD
10
25,93 USD
259,35 USD
100
24,57 USD
2 457,00 USD
500
23,20 USD
11 602,50 USD
1000
21,84 USD
21 840,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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