IPB037N06N3 G

IPB037N06N3 G
Mfr. #:
IPB037N06N3 G
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB037N06N3 G Scheda dati
Consegna:
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ECAD Model:
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IPB037N06N3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
IPB037N06N3GATMA1 IPB037N06N3GXT SP000397986
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
188 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5 ns
Ora di alzarsi
70 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
90 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistenza
3.7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
40 ns
Tempo di ritardo all'accensione tipico
30 ns
Modalità canale
Aumento
Tags
IPB037N06N3G, IPB037, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB037N06N3GATMA1
DISTI # IPB037N06N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$0.8174
IPB037N06N3GATMA1
DISTI # IPB037N06N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB037N06N3GATMA1
DISTI # IPB037N06N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 90A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$1.0162
  • 100:$1.3065
  • 10:$1.6260
  • 1:$1.8000
IPB037N06N3G
DISTI # IPB037N06N3 G
Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: IPB037N06N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
    IPB037N06N3G
    DISTI # SP000397986
    Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 0
    • 1000:€0.9849
    • 2000:€0.7679
    • 4000:€0.6859
    • 6000:€0.6239
    • 10000:€0.5849
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB037N06N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$0.7279
    • 2000:$0.7269
    • 4000:$0.7249
    • 6000:$0.7229
    • 10000:$0.7209
    IPB037N06N3GATMA1
    DISTI # 60R2653
    Infineon Technologies AGMOSFET, N CHANNEL, 60V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.5100
    • 10:$1.2900
    • 100:$1.0300
    • 500:$0.8970
    IPB037N06N3 G
    DISTI # 726-IPB037N06N3G
    Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    20
    • 1:$1.5100
    • 10:$1.2900
    • 100:$1.0300
    • 500:$0.8970
    • 1000:$0.7440
    IPB037N06N3GATMA1
    DISTI # 726-IPB037N06N3GATMA
    Infineon Technologies AGMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    0
    • 1:$1.5100
    • 10:$1.2900
    • 100:$1.0300
    • 500:$0.8970
    • 1000:$0.7440
    IPB037N06N3GATMA1
    DISTI # IPB037N06N3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,90A,188W,PG-TO263-3996
    • 1:$1.2370
    • 3:$1.0655
    • 10:$0.8559
    • 100:$0.7432
    • 1000:$0.6920
    IPB037N06N3GATMA1
    DISTI # XSFP00000156742
    Infineon Technologies AG 
    RoHS: Compliant
    3365
    • 1000:$0.9200
    • 3365:$0.8625
    IPB037N06N3GATMA1
    DISTI # XSKDRABV0021205
    Infineon Technologies AG 
    RoHS: Compliant
    4320
    • 1000:$1.1900
    • 4320:$1.0900
    IPB037N06N3GATMA1
    DISTI # 1775530
    Infineon Technologies AGMOSFET, N CH, 90A, 30V, PG-TO263-3
    RoHS: Compliant
    2
    • 1:£1.2900
    • 10:£1.0200
    • 100:£0.7690
    • 250:£0.7190
    • 500:£0.6690
    IPB037N06N3GATMA1
    DISTI # 1775530
    Infineon Technologies AGMOSFET, N CH, 90A, 30V, PG-TO263-3
    RoHS: Compliant
    0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    Immagine Parte # Descrizione
    IPB037N06N3GATMA1

    Mfr.#: IPB037N06N3GATMA1

    OMO.#: OMO-IPB037N06N3GATMA1

    MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    IPB037N06N3 G

    Mfr.#: IPB037N06N3 G

    OMO.#: OMO-IPB037N06N3-G

    MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    IPB037N06N3GATMA1

    Mfr.#: IPB037N06N3GATMA1

    OMO.#: OMO-IPB037N06N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 90A TO263-3
    IPB037N06N3

    Mfr.#: IPB037N06N3

    OMO.#: OMO-IPB037N06N3-1190

    Nuovo e originale
    IPB037N06N3G

    Mfr.#: IPB037N06N3G

    OMO.#: OMO-IPB037N06N3G-1190

    Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)
    IPB037N06N3 G

    Mfr.#: IPB037N06N3 G

    OMO.#: OMO-IPB037N06N3-G-124

    Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di IPB037N06N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,96 USD
    0,96 USD
    10
    0,91 USD
    9,13 USD
    100
    0,87 USD
    86,54 USD
    500
    0,82 USD
    408,65 USD
    1000
    0,77 USD
    769,20 USD
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