FDD5810

Mfr. #:: FDD5810
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET LOW VOLTAGE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDD5810 Scheda dati
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 35 A

Rds On - Resistenza Drain-Source:: 16.5 mOhms

Vgs - Tensione Gate-Source:: 20 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 88 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 2.39 mm

Lunghezza:: 6.73 mm

Tipo di transistor:: 1 N-Channel

Larghezza:: 6.22 mm

Marca:: ON Semiconductor / Fairchild

Tempo di caduta:: 34 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 75 ns

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 26 ns

Tempo di ritardo di accensione tipico:: 12 ns

Unità di peso:: 0.139332 oz

Tags: FDD58, FDD5, FDD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD5810 Descrizione

***Yang: TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK - Bulk

***i-Key Marketplace: MOSFET N-CH 60V 7.4A/37A DPAK

***ser: MOSFETs LOW_VOLTAGE

***el Nordic: Contact for details

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:7.4A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):43mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:72W ;RoHS Compliant: Yes

***emi: N-Channel PowerTrench® MOSFET 60V, 45A, 20mΩ

***ark: TAPE REEL / TO-252AA, N-CH ULTRAFET TRENCH MOSFET 60V, 46A, 20MOHM

***ical: Trans MOSFET N-CH 60V 45A 3-Pin (2+Tab) TO-252 T/R

***Yang: MOSFET N-CH 60V 8A/45A TO252AA

***icroelectronics: N-Channel 60V - 0.022Ohm - 35A - DPAK StripFET(TM) II POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 60V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 35A DPAK

***ure Electronics: STD30NF06L Series N-Channel 60 V 0.028 Ohm STripFET POWER MosFet - TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:2.5V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:70W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:30A; Package / Case:DPAK; Power Dissipation Pd:70W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 35 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 105 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 70

***icroelectronics: N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package

***ark: MOSFET, N CHANNEL, 60V, 35A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:17.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 60V, 35A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 80W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 60V; Voltage Vgs Max: 16V; Voltage Vgs Rds on Measurement: 10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 17.6 Milliohms;ID 42A;D-Pak (TO-252AA);-55de

***ure Electronics: Single N-Channel 75 V 22 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: Mosfet, Ips, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.022Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ure Electronics: Single N-Channel 60 V 5.3 mOhm 27 nC OptiMOS Power Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Source Voltage Vds:60V; On Resistance

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, TO-252-3, RoHS

***nell: MOSFET, N-CH, 60V, 45A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 35 mOhm 10 nC OptiMOS Power Mosfet - TO-252-3

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:29A; On Resistance Rds(On):0.027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 29A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 29A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDD5810_F085 DISTI # V36:1790_06337845	ON Semiconductor	60V, 35A, 27 OHM, NCH, POWER T	5000	2500:$0.3963
FDD5810-F085 DISTI # FDD5810-F085CT-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4853In Stock	1000:$0.4843 500:$0.6134 100:$0.7425 10:$0.9520 1:$1.0700
FDD5810-F085 DISTI # FDD5810-F085DKR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4853In Stock	1000:$0.4843 500:$0.6134 100:$0.7425 10:$0.9520 1:$1.0700
FDD5810-F085 DISTI # FDD5810-F085TR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3970 12500:$0.4012 5000:$0.4169 2500:$0.4388
FDD5810 DISTI # FDD5810TR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDD5810 DISTI # FDD5810CT-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDD5810 DISTI # FDD5810DKR-ND	ON Semiconductor	MOSFET N-CH 60V 37A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDD5810_F085 DISTI # 33369254	ON Semiconductor	60V, 35A, 27 OHM, NCH, POWER T	5000	2500:$0.3963
FDD5810 DISTI # FDD5810	ON Semiconductor	TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK - Bulk (Alt: FDD5810) RoHS: Compliant Min Qty: 404 Container: Bulk	Americas - 0	4040:$0.7649 2020:$0.7839 1212:$0.7939 808:$0.8049 404:$0.8099
FDD5810_F085 DISTI # FDD5810-F085	ON Semiconductor	Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD5810-F085) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3679 15000:$0.3769 10000:$0.3819 5000:$0.3869 2500:$0.3899
FDD5810_F085 DISTI # FDD5810-F085	ON Semiconductor	Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: FDD5810-F085) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3699 15000:€0.3989 10000:€0.4319 5000:€0.4719 2500:€0.5759
FDD5810-F085 DISTI # 07AH3897	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	0	1000:$0.4520 500:$0.5740 250:$0.6110 100:$0.6480 50:$0.7140 25:$0.7790 10:$0.8440 1:$0.9900
FDD5810-F085 DISTI # 48AC0935	ON Semiconductor	NMOS DPAK 60V 22 MOHM / REEL	0	1000:$0.5850 500:$0.6320 250:$0.6980 100:$0.7700 1:$0.9880
FDD5810 DISTI # 512-FDD5810	ON Semiconductor	MOSFET LOW VOLTAGE RoHS: Compliant	0
FDD5810-F085 DISTI # 512-FDD5810_F085	ON Semiconductor	MOSFET LOW VOLTAGE RoHS: Compliant	5076	1:$0.9800 10:$0.8360 100:$0.6420 500:$0.5680 1000:$0.4480 2500:$0.3970 10000:$0.3830
FDD5810-F085	ON Semiconductor	RoHS: Not Compliant	1930	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300
FDD5810	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.7A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	540	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000
FDD5810-F085 DISTI # 3003913	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA	2500	500:£0.4250 250:£0.4530 100:£0.4810 10:£0.6780 1:£0.8370
FDD5810-F085 DISTI # 3003913	ON Semiconductor	MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA RoHS: Compliant	0	1000:$0.6060 500:$0.6700 250:$0.7330 100:$0.8130 10:$1.1500 1:$1.3100

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FDD9410L-F085 OMO.#: OMO-FDD9410L-F085	MOSFET ICE Mosfet
	Mfr.#: FDD8878 OMO.#: OMO-FDD8878	MOSFET 30V N-Channel PowerTrench
	Mfr.#: FDD230 OMO.#: OMO-FDD230-1190	Nuovo e originale
	Mfr.#: FDD3N40TF OMO.#: OMO-FDD3N40TF-ON-SEMICONDUCTOR	MOSFET N-CH 400V 2A DPAK
	Mfr.#: FDD7N25LZTM,FDD7N25LZ OMO.#: OMO-FDD7N25LZTM-FDD7N25LZ-1190	Nuovo e originale
	Mfr.#: FDD8453LZ_F085 OMO.#: OMO-FDD8453LZ-F085-1190	Trans MOSFET N-CH 40V 50A 3-Pin DPAK T/R (Alt: FDD8453LZ-F085)
	Mfr.#: FDD8878 OMO.#: OMO-FDD8878-ON-SEMICONDUCTOR	MOSFET N-CH 30V 40A DPAK
	Mfr.#: FDD8878 TO252 OMO.#: OMO-FDD8878-TO252-1190	Nuovo e originale
	Mfr.#: FDDF12N50FI OMO.#: OMO-FDDF12N50FI-1190	Nuovo e originale
	Mfr.#: FDD4141-F085-CUT TAPE OMO.#: OMO-FDD4141-F085-CUT-TAPE-1190	Nuovo e originale

Disponibilità

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Su ordine:: 3500
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FDD5810

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes