AS4C16M16D1A-5TAN

AS4C16M16D1A-5TAN
Mfr. #:
AS4C16M16D1A-5TAN
Produttore:
Alliance Memory
Descrizione:
DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C16M16D1A-5TAN Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C16M16D1A-5TAN maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Serie:
AS4C16M16D1A
Confezione:
Vassoio
Marca:
Memoria dell'Alleanza
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
108
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C16M16D1A, AS4C16M16D1, AS4C16M16D, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***v
    G***v
    RU

    Shipping 1.5 months

    2019-06-14
    G***v
    G***v
    RU

    Packed well, nothing confused. The seller and the goods are satisfied!

    2019-05-18
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Immagine Parte # Descrizione
AS4C16M16D2-25BCNTR

Mfr.#: AS4C16M16D2-25BCNTR

OMO.#: OMO-AS4C16M16D2-25BCNTR

DRAM
AS4C16M16D1-5BINTR

Mfr.#: AS4C16M16D1-5BINTR

OMO.#: OMO-AS4C16M16D1-5BINTR

DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
AS4C16M16D1A-5TIN

Mfr.#: AS4C16M16D1A-5TIN

OMO.#: OMO-AS4C16M16D1A-5TIN

DRAM
AS4C16M16D1A-5TANTR

Mfr.#: AS4C16M16D1A-5TANTR

OMO.#: OMO-AS4C16M16D1A-5TANTR-230

DDR SDRAM 256M 16M x 16 2.5V 66pin TSOP II
AS4C16M16D2-25BCN

Mfr.#: AS4C16M16D2-25BCN

OMO.#: OMO-AS4C16M16D2-25BCN-ALLIANCE-MEMORY

IC DRAM 256M PARALLEL 84TFBGA
AS4C16M16MD1-6BCNTR

Mfr.#: AS4C16M16MD1-6BCNTR

OMO.#: OMO-AS4C16M16MD1-6BCNTR-ALLIANCE-MEMORY

DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
AS4C16M16MD1-6BCN

Mfr.#: AS4C16M16MD1-6BCN

OMO.#: OMO-AS4C16M16MD1-6BCN-ALLIANCE-MEMORY

DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
AS4C16M16D1-5TCN

Mfr.#: AS4C16M16D1-5TCN

OMO.#: OMO-AS4C16M16D1-5TCN-ALLIANCE-MEMORY

DRAM 256Mb, 3.3V, 200Mhz 16M x 16 DDR
AS4C16M16MSA-6BINTR

Mfr.#: AS4C16M16MSA-6BINTR

OMO.#: OMO-AS4C16M16MSA-6BINTR-ALLIANCE-MEMORY

IC DRAM 256M PARALLEL 54FBGA
AS4C16M16MD1-6BCNMT46H16M16LF

Mfr.#: AS4C16M16MD1-6BCNMT46H16M16LF

OMO.#: OMO-AS4C16M16MD1-6BCNMT46H16M16LF-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di AS4C16M16D1A-5TAN è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,48 USD
5,48 USD
10
4,97 USD
49,70 USD
25
4,86 USD
121,50 USD
50
4,84 USD
242,00 USD
100
4,34 USD
434,00 USD
250
4,32 USD
1 080,00 USD
500
4,16 USD
2 080,00 USD
1000
3,78 USD
3 780,00 USD
2000
3,60 USD
7 200,00 USD
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