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NGTB30N120IHRWG

NGTB30N120IHRWG
Mfr. #:
NGTB30N120IHRWG
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 1200V/30A RC IGBT FSII
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTB30N120IHRWG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
NGTB30N120IHRWG maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.2 V
Tensione massima dell'emettitore di gate:
25 V
Corrente continua del collettore a 25 C:
60 A
Pd - Dissipazione di potenza:
384 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
NGTB30N120IHR
Confezione:
Tubo
Marca:
ON Semiconductor
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Unità di peso:
0.229281 oz
Tags
NGTB30N120I, NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 30A FS2-RC Induction Heating
***nell
TRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
***ark
Transistor, Igbt, 2.2V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:384W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Parte # Mfg. Descrizione Azione Prezzo
NGTB30N120IHRWG
DISTI # V99:2348_07300156		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 1000:$2.5240
  • 500:$2.9130
  • 100:$3.2060
  • 10:$3.5990
  • 1:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWGOS-ND		ON SemiconductorIGBT 1200V 60A 384W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		210In Stock
  • 1020:$2.6313
  • 510:$3.1200
  • 120:$3.6650
  • 30:$4.2290
  • 1:$4.9800
NGTB30N120IHRWG
DISTI # 28972727		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		32040
  • 180:$2.9750
NGTB30N120IHRWG
DISTI # 25863340		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 10:$3.5990
  • 3:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWG		ON SemiconductorTrans IGBT Chip N-CH 1.2kV 60A 3-Pin TO-247 Rail (Alt: NGTB30N120IHRWG)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.7900
  • 10:€2.5900
  • 25:€2.4900
  • 50:€2.3900
  • 100:€2.2900
  • 500:€2.1900
  • 1000:€2.0900
NGTB30N120IHRWG
DISTI # 80Y3319		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins, , RoHS Compliant: Yes90
  • 1:$4.7400
  • 10:$4.0300
  • 25:$3.8500
  • 50:$3.6800
  • 100:$3.5000
NGTB30N120IHRWG
DISTI # 863-NGTB30N120IHRWG		ON SemiconductorIGBT Transistors 1200V/30A RC IGBT FSII
RoHS: Compliant		95
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.5000
  • 250:$3.3200
  • 500:$2.9800
  • 1000:$2.5100
  • 2500:$2.3900
NGTB30N120IHRWG
DISTI # 7961331P		ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, TU112
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 7961331		ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, PK26
  • 2:£3.8100
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 2399110		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant		90
  • 1:£4.4900
  • 10:£3.2500
  • 100:£2.8200
  • 250:£2.6700
  • 500:£2.5200
NGTB30N120IHRWG
DISTI # 2399110		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant		90
  • 1:$7.5000
  • 10:$6.3800
  • 100:$5.5400
NGTB30N120IHRWG
DISTI # C1S541900938258		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 10:$3.5990
  • 1:$4.1000
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Mfr.#: MC78M05CDTRKG

OMO.#: OMO-MC78M05CDTRKG-ON-SEMICONDUCTOR

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Mfr.#: LM317T

OMO.#: OMO-LM317T-STMICROELECTRONICS

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Mfr.#: ATTINY84A-PU

OMO.#: OMO-ATTINY84A-PU-MICROCHIP-TECHNOLOGY

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Mfr.#: 4180G

OMO.#: OMO-4180G-AAVID-THERMALLOY

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C1608JB2A102K080AA

Mfr.#: C1608JB2A102K080AA

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Disponibilità
Azione:
100
Su ordine:
2083
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Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,73 USD
4,73 USD
10
4,02 USD
40,20 USD
100
3,49 USD
349,00 USD
250
3,31 USD
827,50 USD
500
2,97 USD
1 485,00 USD
1000
2,50 USD
2 500,00 USD
2500
2,38 USD
5 950,00 USD
5000
2,29 USD
11 450,00 USD
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