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IXFN80N50Q3

IXFN80N50Q3
Mfr. #:
IXFN80N50Q3
Produttore:
Littelfuse
Descrizione:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFN80N50Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN80N50Q3 DatasheetIXFN80N50Q3 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFN80N50Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Montaggio su telaio
Pacchetto/custodia:
SOT-227-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
63 A
Rds On - Resistenza Drain-Source:
65 mOhms
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
200 nC
Pd - Dissipazione di potenza:
780 W
Configurazione:
Separare
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFN80N50
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
250 ns
Quantità confezione di fabbrica:
10
sottocategoria:
MOSFET
Unità di peso:
1.058219 oz
Tags
IXFN80N5, IXFN80, IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET Module, Single - N-Channel, 500V, 63A, 780W, SOT-227B
***nell
MOSFET MODULE, N-CH, 500V, 63A, SOT-227
***ource
HiperFET Power MOSFET Q3-Class
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
Mosfet Module, N-Ch, 500V, 63A, Sot-227; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.065Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFN80N50Q3
DISTI # V36:1790_15877457		IXYS CorporationTrans MOSFET N-CH 500V 63A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN80N50Q3
    DISTI # IXFN80N50Q3-ND    		IXYS CorporationMOSFET N-CH 500V 63A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		14In Stock
    • 100:$30.7626
    • 30:$33.0990
    • 10:$36.0200
    • 1:$38.9400
    IXFN80N50Q3
    DISTI # 747-IXFN80N50Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    RoHS: Compliant    		11
    • 1:$38.9300
    • 5:$36.9900
    • 10:$36.0200
    • 25:$33.1000
    • 50:$31.6900
    • 100:$30.7600
    • 200:$28.2300
    IXFN80N50Q3
    DISTI # 8047583    		IXYS CorporationMOSFET N-CH 500V 63A Q3 HIPERFET SOT227B, EA15
    • 10:£20.0400
    • 1:£20.5400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:£21.9700
    • 50:£24.6600
    • 10:£25.7700
    • 5:£28.7800
    • 1:£29.7400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:$46.9600
    • 10:$54.9700
    • 1:$59.4200
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    Disponibilità
    Azione:
    11
    Su ordine:
    1994
    Inserisci la quantità:
    Il prezzo attuale di IXFN80N50Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    38,93 USD
    38,93 USD
    5
    36,99 USD
    184,95 USD
    10
    36,02 USD
    360,20 USD
    25
    33,10 USD
    827,50 USD
    50
    31,69 USD
    1 584,50 USD
    100
    30,76 USD
    3 076,00 USD
    200
    28,23 USD
    5 646,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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