BSC196N10NS G

Mfr. #:: BSC196N10NS G
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC196N10NS G Scheda dati
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Maggiori informazioni:: BSC196N10NS G maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: INFINEON

categoria di prodotto: FET - Single

Serie: OptiMOS 2

Confezione: Bobina

Alias parziali: BSC196N10NSGATMA1 BSC196N10NSGXT SP000379604

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: TDSON-8

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Singola Quad Scarico Tripla Sorgente

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 78 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 5 ns

Ora di alzarsi: 22 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 8.5 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistenza: 19.6 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 18 ns

Tempo di ritardo all'accensione tipico: 16 ns

Modalità canale: Aumento

Tags: BSC196N10NSG, BSC196, BSC19, BSC1, BSC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC196N10NS G Maggiori informazioni

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.4818
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5596 500:$0.7089 100:$0.9141 10:$1.1570 1:$1.3100
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5596 500:$0.7089 100:$0.9141 10:$1.1570 1:$1.3100
BSC196N10NSGATMA1 DISTI # BSC196N10NSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3789 10000:$0.3649 20000:$0.3519 30000:$0.3399 50000:$0.3339
BSC196N10NSGATMA1 DISTI # 60R2519	Infineon Technologies AG	MOSFET, N CHANNEL, 100V, 45A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:45A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0167ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	5000	1:$1.0900 10:$0.9220 100:$0.7090 500:$0.6260 1000:$0.4940
BSC196N10NS G DISTI # 726-BSC196N10NSG	Infineon Technologies AG	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2 RoHS: Compliant	168	1:$1.0900 10:$0.9220 100:$0.7090 500:$0.6260 1000:$0.4940
BSC196N10NSGATMA1 DISTI # 1775474	Infineon Technologies AG	MOSFET, N CH, 100V, 45A, PG-TDSON-8 RoHS: Compliant	5000	5:£0.9010 25:£0.7450 100:£0.6780
BSC196N10NSGATMA1 DISTI # 1775474	Infineon Technologies AG	MOSFET, N CH, 100V, 45A, PG-TDSON-8 RoHS: Compliant	5000	1:$1.7300 10:$1.4600 100:$1.1300 500:$0.9910 1000:$0.7820 5000:$0.7730

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC196N10NS G OMO.#: OMO-BSC196N10NS-G	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
	Mfr.#: BSC196N10NSGATMA1 OMO.#: OMO-BSC196N10NSGATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC196N10NS OMO.#: OMO-BSC196N10NS-1190	Nuovo e originale
	Mfr.#: BSC196N10NS G OMO.#: OMO-BSC196N10NS-G-1190	MOSFET N-Ch 100V 45A TDSON-8 OptiMOS 2
	Mfr.#: BSC196N10NSG OMO.#: OMO-BSC196N10NSG-1190	Nuovo e originale
	Mfr.#: BSC196N10NSGATMA1 OMO.#: OMO-BSC196N10NSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 45A TDSON-8
	Mfr.#: BSC196N10NSGATMA1 , TDZF OMO.#: OMO-BSC196N10NSGATMA1-TDZF-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 1000
Inserisci la quantità:

Il prezzo attuale di BSC196N10NS G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,74 USD~~; ~~0,74 USD~~

10: ~~0,70 USD~~; ~~7,04 USD~~

100: ~~0,67 USD~~; ~~66,69 USD~~

500: ~~0,63 USD~~; ~~314,95 USD~~

1000: ~~0,59 USD~~; ~~592,80 USD~~

Iniziare con

BSC196N10NSG 4
BSC196 5
BSC19 15
BSC1 141
BSC 999

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BSC196N10NS G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes