IDK12G65C5XTMA2

IDK12G65C5XTMA2
Mfr. #:
IDK12G65C5XTMA2
Produttore:
Infineon Technologies
Descrizione:
Schottky Diodes & Rectifiers SIC DIODES
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IDK12G65C5XTMA2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-2
Se - Corrente diretta:
12 A
Vrrm - Tensione inversa ripetitiva:
650 V
Vf - Tensione diretta:
1.5 V
Ifsm - Corrente diretta in avanti:
97 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
0.65 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Bobina
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
104 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
1000
sottocategoria:
Diodi e raddrizzatori
Nome depositato:
CoolSiC
Vr - Tensione inversa:
650 V
Parte # Alias:
IDK12G65C5 SP001633194
Unità di peso:
0.077603 oz
Tags
IDK12G65C5, IDK12, IDK1, IDK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DIODE SCHOTTKY 650V 12A TO263-2
***ronik
SIC-D 650V 12A (150-wafer)TO263
***ineon
CoolSiC generation 5 represents Infineons leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
Parte # Mfg. Descrizione Azione Prezzo
IDK12G65C5XTMA2
DISTI # IDK12G65C5XTMA2-ND
Infineon Technologies AGDIODE SCHOTTKY 650V 12A TO263-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$3.1035
IDK12G65C5XTMA2
DISTI # IDK12G65C5XTMA2
Infineon Technologies AGSIC DIODES - Tape and Reel (Alt: IDK12G65C5XTMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.9900
  • 2000:$2.8900
  • 4000:$2.7900
  • 6000:$2.6900
  • 10000:$2.5900
IDK12G65C5XTMA2
DISTI # 726-IDK12G65C5XTMA2
Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant
0
  • 1:$5.5900
  • 10:$4.7500
  • 100:$4.1200
  • 250:$3.9100
  • 500:$3.5100
  • 1000:$2.9600
  • 2000:$2.8100
Immagine Parte # Descrizione
MC33074ADR2G

Mfr.#: MC33074ADR2G

OMO.#: OMO-MC33074ADR2G

Operational Amplifiers - Op Amps 3-44V Quad 3mV VIO Industrial Temp
BZT52B39-E3-08

Mfr.#: BZT52B39-E3-08

OMO.#: OMO-BZT52B39-E3-08

Zener Diodes 39 Volt 0.5W 2%
BZT52C4V7-E3-08

Mfr.#: BZT52C4V7-E3-08

OMO.#: OMO-BZT52C4V7-E3-08

Zener Diodes 4.7 Volt 0.5W 5%
SN74LVC1G132DBVR

Mfr.#: SN74LVC1G132DBVR

OMO.#: OMO-SN74LVC1G132DBVR

Logic Gates Sngl 2 Inpt NAND Gate
860040573004

Mfr.#: 860040573004

OMO.#: OMO-860040573004

Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATUL 35V 100uF 20% ESR=180mOhms
MC33074ADR2G

Mfr.#: MC33074ADR2G

OMO.#: OMO-MC33074ADR2G-ON-SEMICONDUCTOR

Operational Amplifiers - Op Amps 3-44V Quad 3mV VIO Industrial Temp
SN74LVC1G132DBVR

Mfr.#: SN74LVC1G132DBVR

OMO.#: OMO-SN74LVC1G132DBVR-TEXAS-INSTRUMENTS

Logic Gates Sngl 2 Inpt NAND Gate
860040573004

Mfr.#: 860040573004

OMO.#: OMO-860040573004-WURTH-ELECTRONICS

CAP 100 UF 20% 35 V
BZT52B39-E3-08

Mfr.#: BZT52B39-E3-08

OMO.#: OMO-BZT52B39-E3-08-VISHAY

Zener Diodes 39 Volt 0.5W 2%
BZT52C4V7-E3-08

Mfr.#: BZT52C4V7-E3-08

OMO.#: OMO-BZT52C4V7-E3-08-VISHAY

Zener Diodes 4.7 Volt 0.5W 5%
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
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