S25FL512SDSMFBG11

S25FL512SDSMFBG11
Mfr. #:
S25FL512SDSMFBG11
Produttore:
Cypress Semiconductor
Descrizione:
Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
S25FL512SDSMFBG11 Scheda dati
Consegna:
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ECAD Model:
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S25FL512SDSMFBG11 maggiori informazioni S25FL512SDSMFBG11 Product Details
Attributo del prodotto
Valore attributo
Produttore
Cypress Semiconductor Corp
categoria di prodotto
Memoria
Serie
FL-S
Confezione
* Imballaggio alternativo
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SO-16
Temperatura di esercizio
-40°C ~ 105°C (TA)
Interfaccia
Seriale SPI
Tensione di alimentazione
2.7 V ~ 3.6 V
Pacchetto-dispositivo-fornitore
16-SO
Dimensione della memoria
512M (64M x 8)
Tipo di memoria
FLASH - NOR
Velocità
80MHz
Architettura
MirrorBit Eclipse
Formato-Memoria
VELOCE
Standard
Interfaccia flash comune (CFI)
Tipo di interfaccia
SPI
Organizzazione
64 M x 8
Alimentazione-Corrente-Max
100 mA
Larghezza bus dati
8 bit
Alimentazione-Tensione-Max
3.6 V
Alimentazione-Tensione-Min
2.7 V
Frequenza di clock massima
80 MHz
Tipo di cronometraggio
asincrono
Tags
S25FL512SDSMFBG, S25FL512SDSMFB, S25FL512SDSM, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERI
***i-Key
IC FLASH 512M SPI 80MHZ 16SOIC
***ark
TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descrizione Azione Prezzo
S25FL512SDSMFBG11
DISTI # S25FL512SDSMFBG11-ND
Cypress SemiconductorIC FLASH 512M SPI 80MHZ 16SOIC
RoHS: Compliant
Min Qty: 94
Container: Tube
Temporarily Out of Stock
  • 94:$8.5576
S25FL512SDSMFBG11
DISTI # 727-S25FL512SDSMFBG1
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$11.0000
  • 10:$10.0000
  • 25:$9.2500
  • 50:$8.5000
  • 250:$7.7500
Immagine Parte # Descrizione
S25FL512SAGBHV210

Mfr.#: S25FL512SAGBHV210

OMO.#: OMO-S25FL512SAGBHV210

NOR Flash Nor
S25FL512SDSBHI213

Mfr.#: S25FL512SDSBHI213

OMO.#: OMO-S25FL512SDSBHI213

NOR Flash Nor
S25FL512SDPBHV213

Mfr.#: S25FL512SDPBHV213

OMO.#: OMO-S25FL512SDPBHV213

NOR Flash Nor
S25FL512SAG-AEC13

Mfr.#: S25FL512SAG-AEC13

OMO.#: OMO-S25FL512SAG-AEC13

NOR Flash
S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGBHM213

Mfr.#: S25FL512SAGBHM213

OMO.#: OMO-S25FL512SAGBHM213-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGMFVG10

Mfr.#: S25FL512SAGMFVG10

OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGMFVG13

Mfr.#: S25FL512SAGMFVG13

OMO.#: OMO-S25FL512SAGMFVG13-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGBHIY10

Mfr.#: S25FL512SAGBHIY10

OMO.#: OMO-S25FL512SAGBHIY10-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SAGMFI013

Mfr.#: S25FL512SAGMFI013

OMO.#: OMO-S25FL512SAGMFI013-CYPRESS-SEMICONDUCTOR

Flash 512Mb 3V 133MHz Serial NOR Flash
Disponibilità
Azione:
Available
Su ordine:
3000
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Il prezzo attuale di S25FL512SDSMFBG11 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
11,62 USD
11,62 USD
10
11,04 USD
110,44 USD
100
10,46 USD
1 046,25 USD
500
9,88 USD
4 940,65 USD
1000
9,30 USD
9 300,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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