CSD75301W1015

Mfr. #:: CSD75301W1015
Descrizione:: IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CSD75301W1015 Scheda dati
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Maggiori informazioni:: CSD75301W1015 maggiori informazioni CSD75301W1015 Product Details

Attributo del prodotto
Valore attributo

Produttore: TI

categoria di prodotto: FET - Array

Serie: NexFET

Confezione: Digi-ReelR

Pacchetto-Custodia: 6-UFBGA, DSBGA

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Pacchetto-dispositivo-fornitore: 6-DSBGA (1x1.5)

Tipo FET: 2 P-Channel (Dual)

Potenza-Max: 800mW

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 195pF @ 10V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 1.2A

Rds-On-Max-Id-Vgs: 100 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 2.1nC @ 4.5V

Tags: CSD75, CSD7, CSD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD75301W1015 Descrizione

***as Instruments: P-Channel Dual Common Source NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2P-CH 20V 1.2A 6DSBGA

***th Star Micro: the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

***ark: P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW

***nell: MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V

Market price

Parte #	Descrizione	Azione	Prezzo
CSD75301W1015 DISTI # 296-24261-2-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-1-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD75301W1015 DISTI # 296-24261-6-ND	MOSFET 2P-CH 20V 1.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD75301W1015 DISTI # CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015) RoHS: Compliant Min Qty: 962	Americas - 0	962:$0.3769 964:$0.3589 1926:$0.3469 4810:$0.3349 9620:$0.3259
CSD75301W1015 DISTI # 595-CSD75301W1015	MOSFET P-Ch-Dual Common Source Pwr MOSFETs RoHS: Compliant	0
CSD75301W1015	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1760	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
CSD75301W1015 DISTI # 1892455	MOSFET, PP CH, 20V, 1.2A, 6DSBGA RoHS: Compliant	988	5:£0.6490 25:£0.5860 100:£0.4450 250:£0.4190 500:£0.3940

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: CSD75301W1015

OMO.#: OMO-CSD75301W1015

MOSFET P-Ch-Dual Common Source Pwr MOSFETs

Mfr.#: CSD75301W1015

OMO.#: OMO-CSD75301W1015-TEXAS-INSTRUMENTS

IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs

Disponibilità

Azione:: Available
Su ordine:: 1000
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Il prezzo attuale di CSD75301W1015 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,49 USD~~; ~~0,49 USD~~

10: ~~0,46 USD~~; ~~4,64 USD~~

100: ~~0,44 USD~~; ~~44,00 USD~~

500: ~~0,42 USD~~; ~~207,75 USD~~

1000: ~~0,39 USD~~; ~~391,10 USD~~

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CSD75301W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes