SI2305CDS-T1-GE3

SI2305CDS-T1-GE3
Mfr. #:
SI2305CDS-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -8V Vds 8V Vgs SOT-23
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2305CDS-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2305CDS-T1-GE3 DatasheetSI2305CDS-T1-GE3 Datasheet (P4-P6)SI2305CDS-T1-GE3 Datasheet (P7-P9)SI2305CDS-T1-GE3 Datasheet (P10)
ECAD Model:
Maggiori informazioni:
SI2305CDS-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-23-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale P
Vds - Tensione di rottura Drain-Source:
8 V
Id - Corrente di scarico continua:
5.8 A
Rds On - Resistenza Drain-Source:
35 mOhms
Vgs th - Tensione di soglia gate-source:
400 mV
Vgs - Tensione Gate-Source:
4.5 V
Qg - Carica cancello:
30 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
1.7 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
1.45 mm
Lunghezza:
2.9 mm
Serie:
SI2
Tipo di transistor:
1 P-Channel
Larghezza:
1.6 mm
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
17 S
Tempo di caduta:
10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
20 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
40 ns
Tempo di ritardo di accensione tipico:
20 ns
Parte # Alias:
SI2305CDS-GE3
Unità di peso:
0.000282 oz
Tags
SI2305CDS-T1, SI2305CDS-T, SI2305C, SI2305, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236
***ark
Mosfet, P Channel, -8V, -5.8A, Sot-23-3, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.028Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
MOSFET, P-CH, 8V, 5.8A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.8A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Power Dissipation Pd:960mW; Voltage Vgs Max:8V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2305CDS-T1-GE3
DISTI # 24264958
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R
RoHS: Compliant
498000
  • 3000:$0.1471
SI2305CDS-T1-GE3
DISTI # 30604688
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R
RoHS: Compliant
2465
  • 250:$0.1759
  • 100:$0.2155
  • 50:$0.2716
  • 13:$0.4360
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9113In Stock
  • 1000:$0.1530
  • 500:$0.2039
  • 100:$0.2974
  • 10:$0.4330
  • 1:$0.5500
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9113In Stock
  • 1000:$0.1530
  • 500:$0.2039
  • 100:$0.2974
  • 10:$0.4330
  • 1:$0.5500
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 5.8A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 3000:$0.1361
SI2305CDS-T1-GE3
DISTI # C1S803600999635
Vishay IntertechnologiesMOSFETs
RoHS: Compliant
2465
  • 500:$0.1200
  • 250:$0.1380
  • 100:$0.1690
  • 50:$0.2130
  • 10:$0.3420
  • 1:$1.5700
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R (Alt: SI2305CDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$1.3200
  • 6000:$0.9103
  • 9000:$0.6769
  • 15000:$0.5500
  • 30000:$0.4981
  • 75000:$0.4800
  • 150000:$0.4632
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2305CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape
Americas - 0
  • 1:$0.1309
  • 30:$0.1259
  • 75:$0.1219
  • 150:$0.1179
  • 375:$0.1139
  • 750:$0.1109
  • 1500:$0.1089
SI2305CDS-T1-GE3
DISTI # SI2305CDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2305CDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1049
  • 6000:$0.1019
  • 12000:$0.0979
  • 18000:$0.0949
  • 30000:$0.0919
SI2305CDS-T1-GE3
DISTI # 55R1909
Vishay IntertechnologiesTrans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 55R1909)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$0.5010
  • 10:$0.3470
  • 25:$0.3130
  • 50:$0.2770
  • 100:$0.2420
  • 250:$0.2210
  • 500:$0.1980
SI2305CDS-T1-GE3
DISTI # 55R1909
Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -5.8A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.8A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,MSL:-, RoHS Compliant: Yes1325
  • 1:$0.5220
  • 10:$0.3620
  • 25:$0.3250
  • 50:$0.2890
  • 100:$0.2520
  • 250:$0.2300
  • 500:$0.2060
  • 1000:$0.1600
SI2305CDS-T1-GE3.
DISTI # 26AC3314
Vishay IntertechnologiesTRANS MOSFET P-CH 8V 4.4A 3-PIN SOT-23 T/R , ROHS COMPLIANT: NO0
  • 1:$0.1240
  • 3000:$0.1210
  • 6000:$0.1170
  • 12000:$0.1090
  • 18000:$0.1050
  • 30000:$0.1000
SI2305CDS-T1-GE3
DISTI # R1082505
Vishay DaleTRANSITOR,SI2302ADS
RoHS: Compliant
0
  • 20:$0.3200
  • 100:$0.2700
  • 200:$0.2400
  • 400:$0.2200
  • 1000:$0.2100
SI2305CDS-T1-GE3
DISTI # 70459667
Vishay SiliconixSI2305CDS-T1-GE3 P-channel MOSFET Transistor,4.4 A,8 V,3-Pin SOT-23
RoHS: Compliant
0
  • 3000:$0.4310
  • 6000:$0.2850
SI2305CDS-T1-GE3
DISTI # 781-SI2305CDS-GE3
Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SOT-23
RoHS: Compliant
44014
  • 1:$0.4900
  • 10:$0.3330
  • 100:$0.2250
  • 500:$0.1800
  • 1000:$0.1350
  • 3000:$0.1240
  • 6000:$0.1170
  • 9000:$0.1090
  • 24000:$0.1000
SI2305CDS-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.035 Ohm Surface Mount TrenchFET Power Mosfet - TO-236
RoHS: Compliant
294000Reel
  • 3000:$0.1370
  • 6000:$0.1360
SI2305CDS-T1-GE3Vishay Siliconix4400 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-23684
  • 57:$0.1350
  • 22:$0.1800
  • 1:$0.2400
SI2305CDS-T1-GE3
DISTI # 7103248P
Vishay IntertechnologiesMOSFET P-CHANNEL 8V 4.4A SOT23, RL23420
  • 160:£0.1640
  • 760:£0.1480
  • 1500:£0.1430
SI2305CDS-T1-GE3
DISTI # 7103248
Vishay IntertechnologiesMOSFET P-CHANNEL 8V 4.4A SOT23, PK880
  • 20:£0.2590
  • 160:£0.1640
  • 760:£0.1480
  • 1500:£0.1430
SI2305CDS-T1-GE3
DISTI # XSFP00000027022
Vishay Siliconix 
RoHS: Compliant
484493
  • 3000:$0.2740
  • 484493:$0.2491
SI2305CDS-T1-GE3
DISTI # 1779258
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
76584
  • 5:£0.2960
  • 25:£0.2420
  • 100:£0.1880
  • 250:£0.1720
  • 500:£0.1560
SI2305CDS-T1-GE3
DISTI # 1779258RL
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
0
  • 1:$0.7750
  • 10:$0.5280
  • 100:$0.3560
  • 500:$0.2850
  • 1000:$0.2140
  • 3000:$0.1970
  • 6000:$0.1850
  • 9000:$0.1730
SI2305CDS-T1-GE3
DISTI # 1779258
Vishay IntertechnologiesMOSFET, P-CH, 8V, 5.8A, SOT23
RoHS: Compliant
54500
  • 1:$0.7750
  • 10:$0.5280
  • 100:$0.3560
  • 500:$0.2850
  • 1000:$0.2140
  • 3000:$0.1970
  • 6000:$0.1850
  • 9000:$0.1730
SI2305CDS-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 8V Vgs SOT-23
RoHS: Compliant
Americas - 54000
    Immagine Parte # Descrizione
    NTS4001NT1G

    Mfr.#: NTS4001NT1G

    OMO.#: OMO-NTS4001NT1G

    MOSFET 30V 270mA N-Channel
    1N5819HW-7-F

    Mfr.#: 1N5819HW-7-F

    OMO.#: OMO-1N5819HW-7-F

    Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
    RC0603FR-07120RL

    Mfr.#: RC0603FR-07120RL

    OMO.#: OMO-RC0603FR-07120RL

    Thick Film Resistors - SMD 120 OHM 1%
    629105136821

    Mfr.#: 629105136821

    OMO.#: OMO-629105136821

    USB Connectors WR-COM Type B SMT 5Pin Horztl FmlMicro
    GRM155R61A475MEAAD

    Mfr.#: GRM155R61A475MEAAD

    OMO.#: OMO-GRM155R61A475MEAAD-MURATA-ELECTRONICS

    Cap Ceramic 4.7uF 10V X5R 20% Pad SMD 0402 85C T/R
    NTS4001NT1G

    Mfr.#: NTS4001NT1G

    OMO.#: OMO-NTS4001NT1G-ON-SEMICONDUCTOR

    MOSFET N-CH 30V 270MA SOT-323
    CRCW060347K0FKEAC

    Mfr.#: CRCW060347K0FKEAC

    OMO.#: OMO-CRCW060347K0FKEAC-VISHAY-DALE

    D11/CRCW0603-C 100 47K 1% ET1
    1N5819HW-7-F

    Mfr.#: 1N5819HW-7-F

    OMO.#: OMO-1N5819HW-7-F-DIODES

    DIODE SCHOTTKY 40V 1A SOD123
    RC0603FR-07120RL

    Mfr.#: RC0603FR-07120RL

    OMO.#: OMO-RC0603FR-07120RL-YAGEO

    Thick Film Resistors - SMD 120 OHM 1%
    629105136821

    Mfr.#: 629105136821

    OMO.#: OMO-629105136821-WURTH-ELECTRONICS

    CONN RCPT USB2.0 MICRO B SMD R/A
    Disponibilità
    Azione:
    29
    Su ordine:
    2012
    Inserisci la quantità:
    Il prezzo attuale di SI2305CDS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,48 USD
    0,48 USD
    10
    0,33 USD
    3,32 USD
    100
    0,22 USD
    22,40 USD
    500
    0,18 USD
    89,50 USD
    1000
    0,13 USD
    134,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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