RN1313(TE85L,F)

RN1313(TE85L,F)
Mfr. #:
RN1313(TE85L,F)
Produttore:
Toshiba
Descrizione:
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RN1313(TE85L,F) Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Separare
Polarità del transistor:
NPN
Resistenza di ingresso tipica:
47 kOhms
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SC-70
Guadagno base/collettore DC hfe min:
120
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Corrente di picco del collettore CC:
100 mA
Pd - Dissipazione di potenza:
100 mW
Temperatura massima di esercizio:
+ 125 C
Serie:
RN1313
Confezione:
Bobina
Guadagno di corrente CC hFE Max:
700
Altezza:
0.9 mm
Lunghezza:
2 mm
Larghezza:
1.25 mm
Marca:
Toshiba
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000988 oz
Tags
RN1313(T, RN1313, RN131, RN13, RN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***S
French Electronic Distributor since 1988
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***et
X34 Pb-F USM TRANSISTOR Pd 100mW F 250Mhz (LF)
*** Americas
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
***ure Electronics
Bipolar Transistors - BJT Trans NPN GP 50V 0.1A
***et
Trans GP BJT NPN 50V 0.1A 3-Pin UMT3F T/R
***nell
TRANS, NPN, 50V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DTC143TUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
***nell
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF
***ark
TRANSISTOR; DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DTC114TUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin UMTF T/R
***ment14 APAC
Transistor; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA; Base Input
***ark
TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
***nell
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Parte # Mfg. Descrizione Azione Prezzo
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)CT-ND
Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2965In Stock
  • 1000:$0.0552
  • 500:$0.0811
  • 250:$0.0952
  • 100:$0.1514
  • 25:$0.1948
  • 10:$0.2700
  • 1:$0.3000
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)DKR-ND
Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    RN1313(TE85L,F)
    DISTI # RN1313(TE85LF)TR-ND
    Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
    RoHS: Compliant
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
      RN1313(TE85L,F)
      DISTI # RN1313(TE85L,F)
      Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN1313(TE85L,F))
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
        RN1313(TE85L,F)
        DISTI # 757-RN1313(TE85L,F)
        Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
        RoHS: Compliant
        6000
        • 1:$0.2900
        • 10:$0.1860
        • 100:$0.0780
        • 1000:$0.0530
        • 3000:$0.0400
        RN1313(TE85L,F)Toshiba America Electronic Components 3678
          Immagine Parte # Descrizione
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F-

          Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

          Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85LF)CT-ND

          Mfr.#: RN1313(TE85LF)CT-ND

          OMO.#: OMO-RN1313-TE85LF-CT-ND-1190

          Nuovo e originale
          RN1313(TE85LF)DKR-ND

          Mfr.#: RN1313(TE85LF)DKR-ND

          OMO.#: OMO-RN1313-TE85LF-DKR-ND-1190

          Nuovo e originale
          RN1313(TE85LF)TR-ND

          Mfr.#: RN1313(TE85LF)TR-ND

          OMO.#: OMO-RN1313-TE85LF-TR-ND-1190

          Nuovo e originale
          RN1313(TE85LF)

          Mfr.#: RN1313(TE85LF)

          OMO.#: OMO-RN1313-TE85LF--1190

          Nuovo e originale
          Disponibilità
          Azione:
          Available
          Su ordine:
          1989
          Inserisci la quantità:
          Il prezzo attuale di RN1313(TE85L,F) è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Iniziare con
          Top