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FCPF400N80ZL1

FCPF400N80ZL1
Mfr. #:
FCPF400N80ZL1
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET SF2 800V 400MOHM E TO220F
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FCPF400N80ZL1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220FP-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
11 A
Rds On - Resistenza Drain-Source:
400 mOhms
Vgs th - Tensione di soglia gate-source:
4.5 V
Vgs - Tensione Gate-Source:
20 V, 30 V
Qg - Carica cancello:
43 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
35.7 W
Configurazione:
Separare
Nome depositato:
SuperFET II
Confezione:
Tubo
Altezza:
16.07 mm
Lunghezza:
10.36 mm
Serie:
FCPF400N80ZL1
Tipo di transistor:
1 N-Channel
Larghezza:
4.9 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
12 S
Tempo di caduta:
2.6 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
12 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
51 ns
Tempo di ritardo di accensione tipico:
20 ns
Unità di peso:
0.080072 oz
Tags
FCPF40, FCPF4, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
***ical
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***icroelectronics
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 800 V 14 A 0.375 Ohm SuperMESH 5 Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220FP Tube
***enic
800V 14A 35W 375m´Î@10V7A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F
***ical
Trans MOSFET N-CH 650V 10.2A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
***ure Electronics
N-Channel 800 V 0.37 Ohm Flange Mount SuperMESH™5 Power Mosfet - TO-220FP
***ark
MOSFET, N-CH, 800V, 12A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 800V, 12A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.37ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 8A 59W 1.55´Î@10V4A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descrizione Azione Prezzo
FCPF400N80ZL1
DISTI # V99:2348_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 2000:$1.2610
  • 1000:$1.2660
  • 500:$1.5480
  • 100:$1.7870
  • 10:$2.2439
  • 1:$2.9359
FCPF400N80ZL1
DISTI # V36:1790_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE0
  • 1000000:$1.1090
  • 500000:$1.1110
  • 100000:$1.2120
  • 10000:$1.3690
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # FCPF400N80ZL1-ND		ON SemiconductorMOSFET N-CH 800V 11A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3937
FCPF400N80ZL1
DISTI # 26637314		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE37000
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # 32826232		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE1000
  • 1000:$1.2213
FCPF400N80ZL1
DISTI # 29068066		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 5:$2.9359
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.0900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 25:€1.2900
  • 10:€1.3900
  • 1:€1.5900
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF400N80ZL1
DISTI # 40Y7278		ON SemiconductorSF2 800V 400MOHM E TO220F / TUBE0
  • 10000:$1.2800
  • 2500:$1.3500
  • 1000:$1.4200
  • 500:$1.6700
  • 100:$1.8500
  • 10:$2.2300
  • 1:$2.7500
FCPF400N80ZL1
DISTI # 512-FCPF400N80ZL1		ON SemiconductorMOSFET SF2 800V 400MOHM E TO220F
RoHS: Compliant		3008
  • 1:$2.6900
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3200
  • 2000:$1.2300
  • 5000:$1.1900
Immagine Parte # Descrizione
ST25RU3993-BQFT

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 MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
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 Switching Voltage Regulators TINY HIGH FREQUENCY ULTRA-LOW IQ CONV.
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A

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STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D

 Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode
12063C334JAT2A

Mfr.#: 12063C334JAT2A

OMO.#: OMO-12063C334JAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 0.33uF 25volts X7R 5%
ST25RU3993-EVAL

Mfr.#: ST25RU3993-EVAL

OMO.#: OMO-ST25RU3993-EVAL-1190

 ST25RU3993 reader IC evaluation board
STPSC20065D

Mfr.#: STPSC20065D

OMO.#: OMO-STPSC20065D-STMICROELECTRONICS

 DIODE SCHOTTKY 650V 20A TO220AC
ST25RU3993-BQFT

Mfr.#: ST25RU3993-BQFT

OMO.#: OMO-ST25RU3993-BQFT-STMICROELECTRONICS

 IC RFID READER 860-960MHZ 48QFN
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di FCPF400N80ZL1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,69 USD
2,69 USD
10
2,28 USD
22,80 USD
100
1,83 USD
183,00 USD
500
1,60 USD
800,00 USD
1000
1,32 USD
1 320,00 USD
2000
1,23 USD
2 460,00 USD
5000
1,19 USD
5 950,00 USD
10000
1,14 USD
11 400,00 USD
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