MMRF1312GSR5

MMRF1312GSR5
Mfr. #:
MMRF1312GSR5
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MMRF1312GSR5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MMRF1312GSR5 DatasheetMMRF1312GSR5 Datasheet (P4-P6)MMRF1312GSR5 Datasheet (P7-P9)MMRF1312GSR5 Datasheet (P10-P12)MMRF1312GSR5 Datasheet (P13-P15)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
2.6 A
Vds - Tensione di rottura Drain-Source:
- 500 mV, 112 V
Guadagno:
19.6 dB
Potenza di uscita:
1 kW
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-1230GS-4L-4
Confezione:
Bobina
Frequenza operativa:
900 MHz to 1.215 GHz
Tipo:
MOSFET di potenza RF
Marca:
NXP / Freescale
Numero di canali:
2 Channel
Pd - Dissipazione di potenza:
1.053 kW
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 6 V, 10 V
Vgs th - Tensione di soglia gate-source:
1.8 V
Parte # Alias:
935320794178
Unità di peso:
0.300472 oz
Tags
MMRF1312, MMRF131, MMRF13, MMRF1, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,900 to 1215 MHz, 1000 W, Typ Gain in dB is 17.3 @ 960 MHz, 52 V, LDMOS, SOT1806
***et
VHV8 1KW 50V NI1230GS-4L
***i-Key
TRANS 900-1215MHZ 1000W 52V
***hardson RFPD
RF POWER TRANSISTOR
Parte # Mfg. Descrizione Azione Prezzo
MMRF1312GSR5
DISTI # V36:1790_14214002
NXP SemiconductorsMMRF1312GS/CFM4/REEL 13" Q2/T30
    MMRF1312GSR5
    DISTI # MMRF1312GSR5TR-ND
    NXP SemiconductorsTRANS 960-1215MHZ 1000W PEAK 50V
    RoHS: Compliant
    Min Qty: 50
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 50:$552.9076
    MMRF1312GSR5
    DISTI # MMRF1312GSR5
    Avnet, Inc.VHV8 1KW 50V NI1230GS-4L - Tape and Reel (Alt: MMRF1312GSR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel
    Americas - 0
    • 500:$528.8900
    • 300:$539.0900
    • 200:$559.4900
    • 100:$582.1900
    • 50:$605.9900
    MMRF1312GSR5
    DISTI # 841-MMRF1312GSR5
    NXP SemiconductorsRF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V0
    • 50:$532.1500
    MMRF1312GSR5
    DISTI # MMRF1312GSR5
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 50:$530.0400
    Immagine Parte # Descrizione
    MMRF1305HSR5

    Mfr.#: MMRF1305HSR5

    OMO.#: OMO-MMRF1305HSR5

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    Mfr.#: MMRF1310HR5

    OMO.#: OMO-MMRF1310HR5

    RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
    MMRF1306HSR5

    Mfr.#: MMRF1306HSR5

    OMO.#: OMO-MMRF1306HSR5

    RF MOSFET Transistors MOSFET 10-500 MHz 1000 W 50 V
    MMRF1315NR1

    Mfr.#: MMRF1315NR1

    OMO.#: OMO-MMRF1315NR1

    RF MOSFET Transistors Broadband RF Power LDMOS Transistor, 500-1000 MHz, 60 W CW, 28 V
    MMRF1320NR1

    Mfr.#: MMRF1320NR1

    OMO.#: OMO-MMRF1320NR1

    RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
    MMRF1308HSR5

    Mfr.#: MMRF1308HSR5

    OMO.#: OMO-MMRF1308HSR5

    RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
    MMRF1320NR1

    Mfr.#: MMRF1320NR1

    OMO.#: OMO-MMRF1320NR1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
    MMRF1318NR1

    Mfr.#: MMRF1318NR1

    OMO.#: OMO-MMRF1318NR1-NXP-SEMICONDUCTORS

    FET RF 110V 450MHZ
    MMRF1311HR5

    Mfr.#: MMRF1311HR5

    OMO.#: OMO-MMRF1311HR5-NXP-SEMICONDUCTORS

    TRANS 470-860MHZ 600W 50V
    MMRF1310HR5

    Mfr.#: MMRF1310HR5

    OMO.#: OMO-MMRF1310HR5-NXP-SEMICONDUCTORS

    RF MOSFET Transistors Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di MMRF1312GSR5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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