BSM50GB120DN2

BSM50GB120DN2
Mfr. #:
BSM50GB120DN2
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules 1200V 50A DUAL
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM50GB120DN2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
mezzo ponte
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.5 V
Corrente continua del collettore a 25 C:
78 A
Corrente di dispersione gate-emettitore:
200 nA
Pd - Dissipazione di potenza:
400 W
Pacchetto/custodia:
Half Bridge1
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Altezza:
30.5 mm
Lunghezza:
94 mm
Larghezza:
34 mm
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Parte # Alias:
BSM50GB120DN2HOSA1 SP000095922
Tags
BSM50GB120DN2, BSM50GB120DN, BSM50GB120D, BSM50GB120, BSM50GB12, BSM50GB1, BSM50GB, BSM50G, BSM5, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V, 50A, DUAL
***nell
IGBT MODULE, DUAL, 1200V; Transistor type:Series IGBT(Half bridge) + Freewheel Diodes; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:3V; Power dissipation:400W; Case style:Half Bridge 1; Case style, alternate:M34a; Current, Icm pulsed:100A; Power, Pd:400W; Temperature, current:80°C; Termination Type:Screw; Time, fall:100ns; Time, rise:100ns; Voltage, Vceo:1200V
Parte # Mfg. Descrizione Azione Prezzo
BSM50GB120DN2HOSA1
DISTI # V36:1790_18204614
Infineon Technologies AGBSM50GB120DN2HOSA10
  • 10000:$57.2200
  • 5000:$57.2300
  • 1000:$60.7800
  • 100:$70.0100
  • 10:$71.7600
BSM50GB120DN2HOSA1
DISTI # BSM50GB120DN2HOSA1-ND
Infineon Technologies AGIGBT 2 MED POWER 34MM-1
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$71.7560
BSM50GB120DN2
DISTI # SP000095922
Infineon Technologies AGTrans IGBT Module N-CH 1200V 78A ±20V Screw Mount (Alt: SP000095922)
Min Qty: 1
Europe - 691
    BSM 50 GB 120 DN2
    DISTI # BSM50GB120DN2
    Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 78A 7-Pin 34mm (Alt: BSM50GB120DN2)
    RoHS: Compliant
    Min Qty: 10
    Asia - 0
    • 500:$59.7570
    • 250:$60.5231
    • 100:$61.3091
    • 50:$62.1158
    • 30:$63.7946
    • 20:$65.5667
    • 10:$67.4400
    BSM50GB120DN2HOSA1
    DISTI # BSM50GB120DN2HOSA1
    Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 50A nom - Trays (Alt: BSM50GB120DN2HOSA1)
    RoHS: Compliant
    Min Qty: 10
    Container: Tray
    Americas - 0
      BSM50GB120DN2
      DISTI # 641-BSM50GB120DN2
      Infineon Technologies AGIGBT Modules 1200V 50A DUAL
      RoHS: Compliant
      0
        BSM50GB120DN2HOSA1
        DISTI # XSKDRABV0052102
        Infineon Technologies AG 
        RoHS: Compliant
        547 in Stock0 on Order
        • 547:$82.3500
        • 10:$88.2400
        BSM50GB120DN2
        DISTI # 1496954
        Infineon Technologies AGIGBT MODULE, DUAL, 1200V
        RoHS: Compliant
        0
        • 100:$98.9000
        • 25:$106.7100
        • 10:$108.8500
        • 5:$111.7400
        • 1:$113.8400
        Immagine Parte # Descrizione
        BSM50GB60DLC

        Mfr.#: BSM50GB60DLC

        OMO.#: OMO-BSM50GB60DLC

        IGBT Modules 600V 50A DUAL
        BSM50GB120DN2

        Mfr.#: BSM50GB120DN2

        OMO.#: OMO-BSM50GB120DN2

        IGBT Modules 1200V 50A DUAL
        BSM50GA120D

        Mfr.#: BSM50GA120D

        OMO.#: OMO-BSM50GA120D-1190

        Nuovo e originale
        BSM50GB100DN1

        Mfr.#: BSM50GB100DN1

        OMO.#: OMO-BSM50GB100DN1-1190

        Nuovo e originale
        BSM50GB120N2

        Mfr.#: BSM50GB120N2

        OMO.#: OMO-BSM50GB120N2-1190

        Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel
        BSM50GP120BOSA1

        Mfr.#: BSM50GP120BOSA1

        OMO.#: OMO-BSM50GP120BOSA1-INFINEON-TECHNOLOGIES

        IGBT MODULE 1200V 50A
        BSM50GX120DN2

        Mfr.#: BSM50GX120DN2

        OMO.#: OMO-BSM50GX120DN2-1190

        Trans IGBT Module N-CH 1.2kV 50A nom 36-Pin (Alt: SP000100372)
        BSM50GD120DLCBOSA1

        Mfr.#: BSM50GD120DLCBOSA1

        OMO.#: OMO-BSM50GD120DLCBOSA1-INFINEON-TECHNOLOGIES

        Trans IGBT Module N-CH
        BSM50GP60GBOSA1

        Mfr.#: BSM50GP60GBOSA1

        OMO.#: OMO-BSM50GP60GBOSA1-INFINEON-TECHNOLOGIES

        IGBT 2 LOW POWER ECONO3-3
        BSM50GX120DN2BOSA1

        Mfr.#: BSM50GX120DN2BOSA1

        OMO.#: OMO-BSM50GX120DN2BOSA1-INFINEON-TECHNOLOGIES

        LOW POWER ECONO
        Disponibilità
        Azione:
        Available
        Su ordine:
        2000
        Inserisci la quantità:
        Il prezzo attuale di BSM50GB120DN2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        75,54 USD
        75,54 USD
        5
        74,15 USD
        370,75 USD
        10
        72,23 USD
        722,30 USD
        25
        70,81 USD
        1 770,25 USD
        100
        65,63 USD
        6 563,00 USD
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