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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP149L6327HTSA1 DISTI # BSP149L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP149L6327 DISTI # BSP149L6327 | Infineon Technologies AG | Trans MOSFET N-CH 200V 0.66A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP149L6327) RoHS: Not Compliant Min Qty: 962 Container: Bulk | Americas - 0 |
|
| BSP149 L6327 DISTI # 726-BSP149L6327 | Infineon Technologies AG | MOSFET N-Ch 200V 660mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP149L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 346043 |
|
| BSP149 L6327 | Infineon Technologies AG | 13433 | ||
| BSP149L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4927 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: 149L6327 OMO.#: OMO-149L6327-1190 |
Nuovo e originale |