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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FQI4N90TU DISTI # V36:1790_06359437 | ON Semiconductor | 900V N-CHANNEL QFET | 0 |
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| FQI4N90TU DISTI # FQI4N90TU-ND | ON Semiconductor | MOSFET N-CH 900V 4.2A I2PAK Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: FQI4N90TU) Min Qty: 385 Container: Bulk | Americas - 0 |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FQI4N90TU DISTI # FQI4N90TU | ON Semiconductor | Trans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| FQI4N90TU DISTI # 82C4156 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES | 0 |
|
| FQI4N90TU DISTI # 512-FQI4N90TU | ON Semiconductor | MOSFET 900V N-Channel QFET RoHS: Compliant | 287 |
|
| FQI4N90TU | ON Semiconductor | Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 9000 |
|
| FQI4N90TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 1841 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FQG4902 OMO.#: OMO-FQG4902-1190 |
Nuovo e originale |
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Mfr.#: FQG4902TU OMO.#: OMO-FQG4902TU-1190 |
Nuovo e originale |
|
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Mfr.#: FQG4904 OMO.#: OMO-FQG4904-1190 |
Nuovo e originale |
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Mfr.#: FQG4912 OMO.#: OMO-FQG4912-1190 |
Nuovo e originale |