IPP65R065C7

IPP65R065C7
Mfr. #:
IPP65R065C7
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPP65R065C7 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPP65R065C7 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
33 A
Rds On - Resistenza Drain-Source:
58 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
64 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
171 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Serie:
CoolMOS C7
Tipo di transistor:
1 N-Channel
Larghezza:
4.4 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
7 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
72 ns
Tempo di ritardo di accensione tipico:
17 ns
Parte # Alias:
IPP65R065C7XKSA1 SP001080100
Unità di peso:
0.063493 oz
Tags
IPP65R0, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
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OMO.#: OMO-IPP65R190C7FKSA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPP65R190CFDA

OMO.#: OMO-IPP65R190CFDA-1190

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Mfr.#: IPP65R600E6XKSA1

OMO.#: OMO-IPP65R600E6XKSA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPP65R660CFD

OMO.#: OMO-IPP65R660CFD-1190

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Mfr.#: IPP65R660CFD,65F660

OMO.#: OMO-IPP65R660CFD-65F660-1190

Nuovo e originale
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Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1-INFINEON-TECHNOLOGIES

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IPP65R190E6XKSA1

Mfr.#: IPP65R190E6XKSA1

OMO.#: OMO-IPP65R190E6XKSA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 700V 20.2A TO220-3
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IPP65R065C7 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
7,32 USD
7,32 USD
10
6,61 USD
66,10 USD
25
6,31 USD
157,75 USD
100
5,48 USD
548,00 USD
250
5,23 USD
1 307,50 USD
500
4,77 USD
2 385,00 USD
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