BGB 741L7ESD E6327

Mfr. #:: BGB 741L7ESD E6327
Produttore:: Infineon Technologies
Descrizione:: RF Amplifier RF BIP TRANSISTORS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BGB 741L7ESD E6327 Scheda dati
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Maggiori informazioni:: BGB 741L7ESD E6327 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Amplificatori RF

Serie: BGB741L7

Tipo: ESD-Robusto LNA MMIC a banda larga

Confezione: Imballaggio alternativo Digi-ReelR

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TSLP-7-1

Frequenza: 50MHz ~ 5.5GHz

Numero di canali: 1 Channel

Tensione di alimentazione: 1.8 V ~ 4 V

Pacchetto-dispositivo-fornitore: TSLP-7-1

Corrente-Fornitura: 30mA

Guadagno: 19.5dB

Test-Frequenza: 1.5GHz

P1dB: -6.5dBm (0.2mW)

Figura di rumore: 1dB

Tipo RF: Cellulare, RKE, WiFi

Pd-Power-Dissipazione: 120 mW

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tensione di alimentazione di esercizio: 3 V

Corrente-Erogazione Operativa: 10 mA

Frequenza operativa: 50 MHz to 5.5 GHz

Figura di rumore NF: 1.05 dB

P1dB-Punto di compressione: - 6.5 dBm

Part-#-Alias: BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1 SP000442946

OIP3-Intercetta del terzo ordine: 1 dBm

Tags: BGB741L7ESDE6327, BGB741L7ESDE, BGB74, BGB7, BGB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BGB 741L7ESD E6327 Maggiori informazioni

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BGB 741L7ESD E6327 DISTI # C1S322000437197	Infineon Technologies AG	High-Performance Broad Band LNA MMIC Automotive 6-Pin TSLP EP T/R RoHS: Compliant	22	10:$0.5920
BGB741L7ESDE6327XTSA1 DISTI # BGB741L7ESDE6327XTSA1CT-ND	Infineon Technologies AG	IC AMP CELL 50MHZ-5.5GHZ TSLP7-1 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	69In Stock	1000:$0.4854 500:$0.6149 250:$0.6958 100:$0.7928 25:$0.9060 10:$1.0030 1:$1.1300
BGB741L7ESDE6327XTSA1 DISTI # BGB741L7ESDE6327XTSA1DKR-ND	Infineon Technologies AG	IC AMP CELL 50MHZ-5.5GHZ TSLP7-1 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	69In Stock	1000:$0.4854 500:$0.6149 250:$0.6958 100:$0.7928 25:$0.9060 10:$1.0030 1:$1.1300
BGB741L7ESDE6327XTSA1 DISTI # BGB741L7ESDE6327XTSA1TR-ND	Infineon Technologies AG	IC AMP CELL 50MHZ-5.5GHZ TSLP7-1 RoHS: Compliant Min Qty: 7500 Container: Tape & Reel (TR)	On Order	15000:$0.3930 7500:$0.4099
BGB 741L7ESD E6327 DISTI # BGB 741L7ESD E6327	Infineon Technologies AG	High-Performance Broad Band LNA MMIC 6-Pin TSLP EP T/R (Alt: BGB 741L7ESD E6327) RoHS: Compliant Min Qty: 7500 Container: Tape and Reel	Asia - 0	7500:$0.3634 15000:$0.3485 22500:$0.3438 37500:$0.3304 75000:$0.3261 187500:$0.3180 375000:$0.3102
BGB741L7ESDE6327XTSA1 DISTI # BGB741L7ESDE6327XTSA1	Infineon Technologies AG	High-Performance Broad Band LNA MMIC 7-Pin TSLP EP T/R - Tape and Reel (Alt: BGB741L7ESDE6327XTSA1) RoHS: Compliant Min Qty: 7500 Container: Reel	Americas - 0	7500:$0.4439 15000:$0.4279 30000:$0.4119 45000:$0.3979 75000:$0.3909
BGB741L7ESDE6327XTSA1 DISTI # 47Y7988	Infineon Technologies AG	RF BIP TRANSISTORS,MSL:MSL 1 - Unlimited,SVHC:No SVHC (17-Dec-2014) , RoHS Compliant: Yes	55	1:$1.0200 10:$0.8630 25:$0.7960 50:$0.7300 100:$0.6630 250:$0.6250 500:$0.5860 1000:$0.4630
BGB 741L7ESD E6327 DISTI # 726-BGB741L7ESDE63	Infineon Technologies AG	RF Amplifier RF BIP TRANSISTORS RoHS: Compliant	325	1:$1.0200 10:$0.8630 100:$0.6630 500:$0.5860 1000:$0.4630 2500:$0.4100 7500:$0.3950
BGB741L7ESDE6327XTSA1 DISTI # 1107770P	Infineon Technologies AG	LOW NOISE AMPLIFIER (LNA) MMIC TSLP6, RL	30	150:£0.3010
BGB741L7ESD-E6327	Infineon Technologies AG	RF/MICROWAVE AMPLIFIER, 1 FUNC, BIPOLAR	156	44:$1.1750 12:$1.4100 1:$2.3500
BGB 741L7ESD E6327	Infineon Technologies AG	INSTOCK	31105
BGB741L7ESDE6327XTSA1 DISTI # 2443525	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	55	1:$1.6200 10:$1.3700 100:$1.0500 500:$0.9280 1000:$0.7330 2500:$0.6490 7500:$0.6250 22500:$0.6060
BGB741L7ESDE6327XTSA1 DISTI # 2443525	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	60	1:£0.3270 50:£0.3170 100:£0.3100 250:£0.3090 500:£0.3080

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: BGB 741L7ESD E6327

OMO.#: OMO-BGB-741L7ESD-E6327

RF Amplifier RF BIP TRANSISTORS

Mfr.#: BGB 741L7ESD

OMO.#: OMO-BGB-741L7ESD-INFINEON-TECHNOLOGIES

Nuovo e originale

Mfr.#: BGB 741L7ESD E6327

OMO.#: OMO-BGB-741L7ESD-E6327-279

RF Amplifier RF BIP TRANSISTORS

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di BGB 741L7ESD E6327 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,47 USD~~; ~~0,47 USD~~

10: ~~0,44 USD~~; ~~4,42 USD~~

100: ~~0,42 USD~~; ~~41,88 USD~~

500: ~~0,40 USD~~; ~~197,75 USD~~

1000: ~~0,37 USD~~; ~~372,30 USD~~

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BGB 741L7ESD E6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes