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NSBC113EPDXV6T1G

NSBC113EPDXV6T1G
Mfr. #:
NSBC113EPDXV6T1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSBC113EPDXV6T1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - Pre-polarizzati
RoHS:
Y
Configurazione:
Dual
Polarità del transistor:
NPN
Resistenza di ingresso tipica:
1 kOhms
Rapporto resistore tipico:
1
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-563-6
Guadagno base/collettore DC hfe min:
3
Tensione collettore-emettitore VCEO Max:
50 V
Corrente continua del collettore:
100 mA
Corrente di picco del collettore CC:
100 mA
Pd - Dissipazione di potenza:
357 mW
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
NSBC113EPDXV6
Confezione:
Bobina
Guadagno di corrente CC hFE Max:
3
Altezza:
0.55 mm
Lunghezza:
1.6 mm
Larghezza:
1.2 mm
Marca:
ON Semiconductor
Tipologia di prodotto:
BJT - Transistor bipolari - Prepolarizzati
Quantità confezione di fabbrica:
4000
sottocategoria:
transistor
Unità di peso:
0.000106 oz
Tags
NSBC113, NSBC11, NSBC, NSB
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ical
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***ure Electronics
NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***Yang
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
***nell
BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
Parte # Mfg. Descrizione Azione Prezzo
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSTR-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.1040
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSCT-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    NSBC113EPDXV6T1G
    DISTI # NSBC113EPDXV6T1GOSDKR-ND    		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      NSBC113EPDXV6T1G
      DISTI # NSBC113EPDXV6T1G      		ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSBC113EPDXV6T1G)
      RoHS: Compliant
      Min Qty: 8000
      Container: Reel      		Americas - 0
      • 8000:$0.0779
      • 16000:$0.0769
      • 24000:$0.0759
      • 40000:$0.0749
      • 80000:$0.0739
      NSBC113EPDXV6T1G
      DISTI # 49X8950      		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.4030
      • 25:$0.3090
      • 50:$0.2580
      • 100:$0.2160
      • 250:$0.1820
      • 500:$0.1550
      • 1000:$0.1260
      • 2500:$0.1070
      NSBC113EPDXV6T1G
      DISTI # 42K2317      		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.1200
      NSBC113EPDXV6T1G
      DISTI # 863-NSBC113EPDXV6T1G      		ON SemiconductorBipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      RoHS: Compliant      		3800
      • 1:$0.3500
      • 10:$0.2660
      • 100:$0.1440
      • 1000:$0.1080
      • 4000:$0.0930
      • 8000:$0.0870
      • 24000:$0.0800
      • 48000:$0.0770
      • 100000:$0.0740
      NSBC113EPDXV6T1GON Semiconductor 
      RoHS: Not Compliant      		108000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      Immagine Parte # Descrizione
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G

      		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EDXV6T1

      Mfr.#: NSBC113EDXV6T1

      OMO.#: OMO-NSBC113EDXV6T1-ON-SEMICONDUCTOR

      		 TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EDXV6T5

      Mfr.#: NSBC113EDXV6T5

      OMO.#: OMO-NSBC113EDXV6T5-ON-SEMICONDUCTOR

      		 TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EPDXV6T1

      Mfr.#: NSBC113EPDXV6T1

      OMO.#: OMO-NSBC113EPDXV6T1-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN/PNP SOT563
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di NSBC113EPDXV6T1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,35 USD
      0,35 USD
      10
      0,27 USD
      2,66 USD
      100
      0,14 USD
      14,40 USD
      1000
      0,11 USD
      108,00 USD
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