SI5902BDC-T1-E3

SI5902BDC-T1-E3
Mfr. #:
SI5902BDC-T1-E3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET 30V 4.0A 3.12W
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI5902BDC-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Array
Serie
TrinceaFETR
Confezione
Nastro e bobina (TR)
Alias ​​parziali
SI5902BDC-E3
Unità di peso
0.002998 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SMD, Flat Lead
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
1206-8 ChipFET
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
3.12W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
220pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
4A
Rds-On-Max-Id-Vgs
65 mOhm @ 3.1A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
7nC @ 10V
Pd-Power-Dissipazione
1.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
80 ns 12 ns
Ora di alzarsi
80 ns 12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
3.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
65 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
12 ns 10 ns
Tempo di ritardo all'accensione tipico
15 ns 4 ns
Modalità canale
Aumento
Tags
SI5902B, SI5902, SI590, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin Chip FET T/R
***ark
Transistor; Continuous Drain Current, Id:4000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
SI5902BDC-T1-E3
DISTI # V72:2272_09216236
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
RoHS: Compliant
2408
  • 1000:$0.5185
  • 500:$0.6384
  • 250:$0.7282
  • 100:$0.7361
  • 25:$0.9183
  • 10:$0.9290
  • 1:$1.0830
SI5902BDC-T1-E3
DISTI # SI5902BDC-T1-E3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1985In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI5902BDC-T1-E3
DISTI # SI5902BDC-T1-E3DKR-ND
Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1985In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI5902BDC-T1-E3
DISTI # SI5902BDC-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.5852
SI5902BDC-T1-E3
DISTI # 30316800
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
RoHS: Compliant
2408
  • 1000:$0.5185
  • 500:$0.6384
  • 250:$0.7282
  • 100:$0.7361
  • 25:$0.9183
  • 12:$0.9290
SI5902BDC-T1-E3
DISTI # SI5902BDC-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.5529
  • 6000:$0.5359
  • 12000:$0.5139
  • 18000:$0.4999
  • 30000:$0.4869
SI5902BDC-T1-E3
DISTI # 16P3794
Vishay IntertechnologiesDUAL N CHANNEL MOSFET, 30V, 1206,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:-RoHS Compliant: Yes0
  • 1:$1.4300
  • 25:$1.3600
  • 50:$1.2300
  • 100:$1.1100
  • 250:$1.0100
  • 500:$0.8400
  • 1000:$0.7450
SI5902BDC-T1-E3
DISTI # 75M5527
Vishay IntertechnologiesDUAL N-CH 30V (D-S) MOSFET ROHS COMPLIANT: YES0
  • 1:$0.6540
  • 1000:$0.6270
  • 2000:$0.5700
  • 4000:$0.5130
  • 6000:$0.4940
  • 10000:$0.4830
SI5902BDC-T1-E3
DISTI # 781-SI5902BDC-E3
Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs 1206-8 ChipFET
RoHS: Compliant
2710
  • 1:$1.3300
  • 10:$1.1000
  • 100:$0.8400
  • 500:$0.7230
  • 1000:$0.5700
  • 3000:$0.5320
SI5902BDCT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 6000
    SI5902BDC-T1-E3  1918
      SI5902BDC-T1-E3
      DISTI # C1S803603325600
      Vishay IntertechnologiesMOSFETs
      RoHS: Compliant
      2408
      • 250:$0.7282
      • 100:$0.7361
      • 25:$0.9183
      • 10:$0.9290
      SI5902BDC-T1-E3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs 1206-8 ChipFET
      RoHS: Compliant
      Americas -
        Immagine Parte # Descrizione
        SI5902BDC-T1-GE3

        Mfr.#: SI5902BDC-T1-GE3

        OMO.#: OMO-SI5902BDC-T1-GE3

        MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
        SI5902BDC-T1-E3

        Mfr.#: SI5902BDC-T1-E3

        OMO.#: OMO-SI5902BDC-T1-E3

        MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
        SI5902BDC-T1-E3

        Mfr.#: SI5902BDC-T1-E3

        OMO.#: OMO-SI5902BDC-T1-E3-VISHAY

        IGBT Transistors MOSFET 30V 4.0A 3.12W
        SI5902BDC-T1-GE3

        Mfr.#: SI5902BDC-T1-GE3

        OMO.#: OMO-SI5902BDC-T1-GE3-VISHAY

        MOSFET 2N-CH 30V 4A 1206-8
        SI5902BDCT1E3

        Mfr.#: SI5902BDCT1E3

        OMO.#: OMO-SI5902BDCT1E3-1190

        Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        Disponibilità
        Azione:
        Available
        Su ordine:
        4000
        Inserisci la quantità:
        Il prezzo attuale di SI5902BDC-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,72 USD
        0,72 USD
        10
        0,69 USD
        6,88 USD
        100
        0,65 USD
        65,21 USD
        500
        0,62 USD
        307,90 USD
        1000
        0,58 USD
        579,60 USD
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