GS881E18CGD-250V

GS881E18CGD-250V
Mfr. #:
GS881E18CGD-250V
Produttore:
GSI Technology
Descrizione:
SRAM 1.8/2.5V 512K x 18 9M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS881E18CGD-250V Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS881E18CGD-250V maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
Y
Dimensione della memoria:
9 Mbit
Organizzazione:
512 k x 18
Orario di accesso:
5.5 ns
Frequenza massima di clock:
250 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
2.7 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
125 mA, 165 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS881E18CGD
Tipo:
DCD
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
66
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS881E18CGD-25, GS881E18CGD-2, GS881E18CGD, GS881E18CG, GS881E1, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V/2.5V 9M-Bit 512K x 18 5.5ns/3ns 165-Pin FBGA Tray
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS881E18CGD-150

Mfr.#: GS881E18CGD-150

OMO.#: OMO-GS881E18CGD-150

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-150IV

Mfr.#: GS881E18CGT-150IV

OMO.#: OMO-GS881E18CGT-150IV

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CGT-150V

Mfr.#: GS881E18CGT-150V

OMO.#: OMO-GS881E18CGT-150V

SRAM 1.8/2.5V 512K x 18 9M
GS881E18CGT-300

Mfr.#: GS881E18CGT-300

OMO.#: OMO-GS881E18CGT-300

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGD-200

Mfr.#: GS881E18CGD-200

OMO.#: OMO-GS881E18CGD-200

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGD-300

Mfr.#: GS881E18CGD-300

OMO.#: OMO-GS881E18CGD-300

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGT-300I

Mfr.#: GS881E18CGT-300I

OMO.#: OMO-GS881E18CGT-300I

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CD-333

Mfr.#: GS881E18CD-333

OMO.#: OMO-GS881E18CD-333

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CGD-333

Mfr.#: GS881E18CGD-333

OMO.#: OMO-GS881E18CGD-333

SRAM 2.5 or 3.3V 512K x 18 9M
GS881E18CD-200V

Mfr.#: GS881E18CD-200V

OMO.#: OMO-GS881E18CD-200V

SRAM 1.8/2.5V 512K x 18 9M
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di GS881E18CGD-250V è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
66
18,29 USD
1 207,14 USD
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