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AUIRFSA8409-7P

AUIRFSA8409-7P
Mfr. #:
AUIRFSA8409-7P
Produttore:
Infineon / IR
Descrizione:
MOSFET N-CHANNEL 30 / 40
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AUIRFSA8409-7P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AUIRFSA8409-7P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-7
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
40 V
Id - Corrente di scarico continua:
523 A
Rds On - Resistenza Drain-Source:
690 mOhms
Vgs th - Tensione di soglia gate-source:
2.2 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
305 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
375 W
Configurazione:
Separare
Modalità canale:
Aumento
Qualificazione:
AEC-Q101
Confezione:
Tubo
Altezza:
4.4 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
9.25 mm
Marca:
Infineon / IR
Transconduttanza diretta - Min:
180 S
Tempo di caduta:
90 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
94 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
150 ns
Tempo di ritardo di accensione tipico:
21 ns
Parte # Alias:
SP001520354
Tags
AUIRFS, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
AUTOMOTIVE G12.7 MOSFET 40VN IN IMPROVED D2PAK-7P PLUS (D2PAK-7P+) PACKAGE, TAPE & REEL LEFT
***ure Electronics
AUIRFSA8409 Series 40 V 0.69 mOhm Automotive Grade HEXFET® Power Mosfet -D2PAK-7
***ical
Trans MOSFET N-CH Si 40V 523A Automotive 7-Pin(6+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH Si 40V 523A 7-Pin(6+Tab) D2PAK T/R
***i-Key
MOSFET NCH 40V 523A D2PAK
***ineon
Benefits: Advanced Process Technology; New Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, 360A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:40V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 40V, 360A, TO263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:360A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):500µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:375W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
AUIR HEXFET® Power MOSFETs
Infineon AUIR HEXFET® Power MOSFETs are designed for Automotive applications and use the latest processing techniques to achieve extremely low on-resistance per silicon area. The AUIR feature 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. The MOSFETs are extremely efficient and reliable for a wide variety of applications.
Parte # Mfg. Descrizione Azione Prezzo
AUIRFSA8409-7P
DISTI # V99:2348_14701496		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A Automotive Tube
RoHS: Compliant		253
  • 1000:$2.8280
  • 500:$3.3920
  • 250:$3.6750
  • 100:$3.9860
  • 10:$4.5969
  • 1:$5.9334
AUIRFSA8409-7P
DISTI # V36:1790_14701496		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A Automotive Tube
RoHS: Compliant		0
  • 500000:$2.3920
  • 250000:$2.3970
  • 50000:$3.0790
  • 5000:$4.4840
  • 500:$4.7300
AUIRFSA8409-7P
DISTI # AUIRFSA8409-7P-ND		Infineon Technologies AGMOSFET NCH 40V 523A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		987In Stock
  • 2500:$2.8677
  • 500:$3.5793
  • 100:$4.2045
  • 50:$4.8514
  • 10:$5.1320
  • 1:$5.7100
AUIRFSA8409-7P
DISTI # 32909395		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A Automotive Tube
RoHS: Compliant		668
  • 4:$2.6465
AUIRFSA8409-7P
DISTI # 30610323		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A Automotive Tube
RoHS: Compliant		640
  • 500:$3.6593
  • 200:$4.1565
  • 50:$4.4242
  • 10:$5.9032
  • 4:$6.9360
AUIRFSA8409-7P
DISTI # 29554093		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A Automotive Tube
RoHS: Compliant		253
  • 1000:$2.8280
  • 500:$3.3920
  • 250:$3.6750
  • 100:$3.9860
  • 10:$4.5969
  • 3:$5.9334
AUIRFSA8409-7P
DISTI # AUIRFSA8409-7P		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A 7-Pin(6+Tab) D2PAK Tube - Rail/Tube (Alt: AUIRFSA8409-7P)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 2500:$2.5900
  • 5000:$2.5900
  • 1500:$2.6900
  • 1000:$2.7900
  • 500:$2.8900
AUIRFSA8409-7P
DISTI # SP001520354		Infineon Technologies AGTrans MOSFET N-CH Si 40V 523A 7-Pin(6+Tab) D2PAK Tube (Alt: SP001520354)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.2900
  • 500:€2.4900
  • 100:€2.5900
  • 50:€2.6900
  • 25:€2.7900
  • 10:€2.8900
  • 1:€3.0900
AUIRFSA8409-7P
DISTI # 43AC2190		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, 360A, TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:360A,Drain Source Voltage Vds:40V,On Resistance Rds(on):500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes586
  • 500:$3.4300
  • 250:$3.8400
  • 100:$4.0400
  • 50:$4.2500
  • 25:$4.4600
  • 10:$4.6700
  • 1:$5.4800
AUIRFSA8409-7P
DISTI # 942-AUIRFSA8409-7P		Infineon Technologies AGMOSFET N-CHANNEL 30 / 40
RoHS: Compliant		1134
  • 1:$5.4300
  • 10:$4.6200
  • 100:$4.0000
  • 250:$3.8000
  • 500:$3.4000
  • 1000:$2.8700
  • 2500:$2.7300
AUIRFSA8409-7PInternational Rectifier 
RoHS: Not Compliant		81
  • 1000:$2.7000
  • 500:$2.8400
  • 100:$2.9600
  • 25:$3.0800
  • 1:$3.3200
AUIRFSA8409-7P
DISTI # 2803374		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, 360A, TO263
RoHS: Compliant		524
  • 1000:$4.2400
  • 500:$4.3200
  • 250:$4.5500
  • 100:$4.8100
  • 10:$5.4400
  • 1:$5.8200
AUIRFSA8409-7P
DISTI # C1S322000686562		Infineon Technologies AGMOSFETs640
  • 500:$2.8700
  • 200:$3.2600
  • 50:$3.4700
  • 10:$4.6300
  • 1:$5.4400
AUIRFSA8409-7P
DISTI # 2803374		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, 360A, TO263974
  • 500:£2.6400
  • 250:£2.9600
  • 100:£3.1100
  • 10:£3.5900
  • 1:£4.6800
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OMO.#: OMO-ZTL431AFTA-DIODES

 Nuovo e originale
B57351V5103H060

Mfr.#: B57351V5103H060

OMO.#: OMO-B57351V5103H060-EPCOS

 Thermistor NTC 10K Ohm 3% 2-Pin 0603 Surface Mount Solder Pad 3980K >= -3.5 Cardboard T/R
A759PY687M1HAAE026

Mfr.#: A759PY687M1HAAE026

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 Aluminum Organic Polymer Capacitors 50V 680uF 20% ESR=26mOhms
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di AUIRFSA8409-7P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,43 USD
5,43 USD
10
4,62 USD
46,20 USD
100
4,00 USD
400,00 USD
250
3,80 USD
950,00 USD
500
3,40 USD
1 700,00 USD
1000
2,87 USD
2 870,00 USD
2500
2,73 USD
6 825,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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