STD7ANM60N

Name: STMicroelectronics - STD7ANM60N
Brand: STMicroelectronics
SKU: OMO-2815249
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: STD7ANM60N
Produttore:: STMicroelectronics
Descrizione:: IGBT Transistors MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STD7ANM60N Scheda dati
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Maggiori informazioni:: STD7ANM60N maggiori informazioni STD7ANM60N Product Details

Attributo del prodotto
Valore attributo

Produttore: STMicroelectronics

categoria di prodotto: FET - Single

Serie: MDmesh II

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TO-252-3, DPak (2 Leads + Tab), SC-63

Tecnologia: si

Temperatura di esercizio: 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: DPAK

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 45W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 600V

Ingresso-Capacità-Ciss-Vds: 363pF @ 50V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 5A (Tc)

Rds-On-Max-Id-Vgs: 900 mOhm @ 2.5A, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Carica-Qg-Vgs: 14nC @ 10V

Pd-Power-Dissipazione: 45 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 12 ns

Ora di alzarsi: 10 ns

Vgs-Gate-Source-Voltage: 25 V

Id-Continuo-Scarico-Corrente: 5 A

Vds-Drain-Source-Breakdown-Voltage: 600 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 3 V

Rds-On-Drain-Source-Resistenza: 900 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 26 ns

Tempo di ritardo all'accensione tipico: 7 ns

Qg-Gate-Carica: 14 nC

Tags: STD7, STD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STD7ANM60N Descrizione

***p One Stop Global: Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STD7ANM60N Series 600 V 5 A 0.9 Ohm N-Channel MDmesh II Power Mosfet - D-PAK-3

***ical: Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) DPAK T/R

***et Europe: Trans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube

***ark: Mosfet, Aec-Q101, N-Ch, 600V, 5A, 45W Rohs Compliant: Yes

***Components: MOSFET N-Ch 600V 5A MDmesh D2PAK

***i-Key: MOSFET N-CH 600V DPAK

***ronik: N-CH 600V 5A 800mOhm DPAK

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh II Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, AEC-Q101, CA-N, 600V, 5A, 45W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:5A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:45W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:MDmesh II Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)

STD7ANM60N Maggiori informazioni

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STD7ANM60N DISTI # V72:2272_17708017	STMicroelectronics	Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	2099	1000:$0.6560 500:$0.8006 250:$0.9815 100:$0.9926 25:$0.9940 10:$0.9977 1:$1.3244
STD7ANM60N DISTI # 497-13940-1-ND	STMicroelectronics	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4012In Stock	1000:$0.7206 500:$0.9127 100:$1.1770 10:$1.4890 1:$1.6800
STD7ANM60N DISTI # 497-13940-6-ND	STMicroelectronics	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4012In Stock	1000:$0.7206 500:$0.9127 100:$1.1770 10:$1.4890 1:$1.6800
STD7ANM60N DISTI # 497-13940-2-ND	STMicroelectronics	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.6530
STD7ANM60N DISTI # 25929876	STMicroelectronics	Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	2099	1000:$0.6560 500:$0.8006 250:$0.9815 100:$0.9926 25:$0.9940 12:$0.9977
STD7ANM60N DISTI # STD7ANM60N	STMicroelectronics	Trans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube - Tape and Reel (Alt: STD7ANM60N) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6349 5000:$0.6049 10000:$0.5779 15000:$0.5519 25000:$0.5409
STD7ANM60N DISTI # STD7ANM60N	STMicroelectronics	Trans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube (Alt: STD7ANM60N) RoHS: Compliant Min Qty: 2500 Container: Tube	Europe - 0	2500:€0.7849 5000:€0.6419 10000:€0.5889 15000:€0.5429 25000:€0.5049
STD7ANM60N DISTI # STD7ANM60N	STMicroelectronics	Trans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube (Alt: STD7ANM60N) RoHS: Compliant Min Qty: 2500 Container: Tube	Asia - 0
STD7ANM60N DISTI # 511-STD7ANM60N	STMicroelectronics	MOSFET N-CH 600V 5A 0.84Ohm MDmesh II RoHS: Compliant	0	1:$1.4000 10:$1.1900 100:$0.9120 500:$0.8060 1000:$0.6360 2500:$0.5640 10000:$0.5430
STD7ANM60N DISTI # C1S730200810201	STMicroelectronics	Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	2099	250:$0.9815 100:$0.9926 25:$0.9940 10:$0.9977

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: STD7ANM60N

OMO.#: OMO-STD7ANM60N

MOSFET N-CH 600V 5A 0.84Ohm MDmesh II

Mfr.#: STD7ANM60N

OMO.#: OMO-STD7ANM60N-STMICROELECTRONICS

IGBT Transistors MOSFET N-CH 600V 5A 0.84Ohm MDmesh II

Disponibilità

Azione:: Available
Su ordine:: 5500
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,81 USD~~; ~~0,81 USD~~

10: ~~0,77 USD~~; ~~7,71 USD~~

100: ~~0,73 USD~~; ~~73,02 USD~~

500: ~~0,69 USD~~; ~~344,80 USD~~

1000: ~~0,65 USD~~; ~~649,10 USD~~

Iniziare con

STD7 93
STD 1765

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STD7ANM60N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes