2SK3617-TL-E

Mfr. #:: 2SK3617-TL-E
Produttore:: Rochester Electronics, LLC
Descrizione:: - Bulk (Alt: 2SK3617-TL-E)
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: 2SK3617-TL-E Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Tags: 2SK3617, 2SK361, 2SK36, 2SK3, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3617-TL-E Descrizione

***ical: Trans MOSFET N-CH Si 100V 6A 3-Pin(2+Tab) TP-FA

***nell: MOSFET, N CH, 100V, 6A, TO-251; Transistor Polarity:N-Channel; Current Id Max:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:15W; Transistor Case Style:TO-251; No. of Pins:3

***eco: Transistor MOSFET P Channel 100 Volt 6.6 Amp 3 Pin 2+ Tab Dpak

***ure Electronics: Single P-Channel 100V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -100V, -6.5A, 480 mOhm, 18 nC Qg, D-Pak

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; On Resistance Rds(On):0.48Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***emi: P-Channel Power MOSFET, QFET®, -100 V, -6.6 A, 530 mΩ, DPAK

***ment14 APAC: MOSFET, P-CH, -100V, -6.6A, TO-252AA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Source Voltage Vds:-100V; On

*** Stop Electro: Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P-CH, -100V, -6.6A, TO-252AA-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.6A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 44W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***el Electronic: VISHAY SIB456DK-T1-GE3 MOSFET Transistor, N Channel, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 100V 2.7A 6-Pin PowerPAK SC-75 T/R

***enic: 100V 6.3A 13W 185m´Î@10V1.9A 3V@250Ã×A N Channel PowerPAK SC-75-6L MOSFETs ROHS

***ure Electronics: 100V 6.3A 0.185OHM PPAK SC-75 THUNDERFET

***or: MOSFET N-CH 100V 6.3A PPAK SC75

***i-Key: MOSFET N-CH 100V 7.3A D2PAK

***ser: MOSFETs 100V N-Channel QFET

***el Electronic: IC SUPERVISOR 1 CHANNEL 5VSOF

*** Electronics: Trans MOSFET N-CH 100V 7.3A 3-Pin(3+Tab) I2PAK Rail

***i-Key: MOSFET N-CH 100V 7.3A I2PAK

***ser: MOSFETs 100V N-Ch QFET Logic Level

***el Electronic: IC SUPERVISOR 1 CHANNEL 3SSOP

***itex: Transistor: P-MOSFET; unipolar; -100V; -6.8A; 0.6ohm; 60W; -55+175 deg.C; THT; TO220

***klin Elektronik: SILICONIX THT MOSFET PFET -100V -6,8A 600mΩ 175°C TO-220 IRF9520PBF

*** Source Electronics: Trans MOSFET P-CH 100V 6.8A 3-Pin(3+Tab) TO-220AB / MOSFET P-CH 100V 6.8A TO-220AB

***ure Electronics: Single P-Channel 100 V 0.6 Ohms Flange Mount Power Mosfet - TO-220AB

*** electronic: Transistor MOSFET P-Ch. -6A/-100V TO220

***roFlash: Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: P CHANNEL MOSFET, -100V, -6.8A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: No

***nell: MOSFET, P, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-100V; Current, Id Cont:6A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:24A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:40W; Power, Pd:40W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:100V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
2SK3617-TL-E DISTI # 2SK3617-TL-E	ON Semiconductor	- Bulk (Alt: 2SK3617-TL-E) Min Qty: 962 Container: Bulk	Americas - 0	9620:$0.3199 4810:$0.3289 2886:$0.3329 1924:$0.3369 962:$0.3389
2SK3617-TL-E	ON Semiconductor	NCH 4V DRIVE SERIES RoHS: Not Compliant	71400	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: 2SK3614-TD-E OMO.#: OMO-2SK3614-TD-E-1190	Nuovo e originale
	Mfr.#: 2SK3615-E OMO.#: OMO-2SK3615-E-1190	Nuovo e originale
	Mfr.#: 2SK3615-TL-E OMO.#: OMO-2SK3615-TL-E-1190	- Bulk (Alt: 2SK3615-TL-E)
	Mfr.#: 2SK3617 OMO.#: OMO-2SK3617-1190	Nuovo e originale
	Mfr.#: 2SK3617-S-TL-E OMO.#: OMO-2SK3617-S-TL-E-1190	Nuovo e originale
	Mfr.#: 2SK3617-TL-E OMO.#: OMO-2SK3617-TL-E-1190	- Bulk (Alt: 2SK3617-TL-E)
	Mfr.#: 2SK3618-TL-E OMO.#: OMO-2SK3618-TL-E-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3500
Inserisci la quantità:

Il prezzo attuale di 2SK3617-TL-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,51 USD~~; ~~0,51 USD~~

10: ~~0,48 USD~~; ~~4,84 USD~~

100: ~~0,46 USD~~; ~~45,90 USD~~

500: ~~0,43 USD~~; ~~216,75 USD~~

1000: ~~0,41 USD~~; ~~408,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

2SK3617 3
2SK361 7
2SK36 128
2SK3 1303
2SK 4442

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2SK3617-TL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes