FGY75N60SMD

Mfr. #:: FGY75N60SMD
Produttore:: ON Semiconductor / Fairchild
Descrizione:: IGBT Transistors 600V, 75A Field Stop IGBT
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FGY75N60SMD Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: FGY75N60SMD maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: Transistor IGBT

RoHS:: Y

Tecnologia:: si

Pacchetto/custodia:: Power-247

Stile di montaggio:: Foro passante

Tensione collettore-emettitore VCEO Max:: 600 V

Tensione di saturazione collettore-emettitore:: 1.9 V

Tensione massima dell'emettitore di gate:: 20 V

Corrente continua del collettore a 25 C:: 150 A

Pd - Dissipazione di potenza:: 750 W

Serie:: FGY75N60SMD

Confezione:: Tubo

Marca:: ON Semiconductor / Fairchild

Corrente di dispersione gate-emettitore:: 400 nA

Tipologia di prodotto:: Transistor IGBT

Quantità confezione di fabbrica:: 450

sottocategoria:: IGBT

Unità di peso:: 0.269105 oz

Tags: FGY7, FGY

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGY75N60SMD Descrizione

*** Source Electronics: Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ical: Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 80 A very high speed

***ical: Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.

***rchild Semiconductor: Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 600V 120A Automotive 3-Pin(3+Tab) TO-247 Tube

***ark: 600V/60A Field Stop IGBT Gen 2 - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

***rchild Semiconductor: Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital PowerGenerator where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3

***rochip: IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247

***nsix Microsemi: Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***th Star Micro: Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ

***ical: Trans IGBT Chip N-CH 600V 140A 483000mW 3-Pin(3+Tab) TO-247AD Tube

*** Electronic Components: IGBT Transistors 600V UltraFast IGBT TO-247

***(Formerly Allied Electronics): G6.2, 600V, 90A, CO-PAK-247AD | Infineon IRGP6690D-EPBF

***ineon: Benefits: Low VCE(ON) and switching losses; Optimized diode for full bridge hard switch converters; Square RBSOA and maximum junction temperature 175C; 5s short circuit SOA; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant | Target Applications: Welding

FGY75N60SMD Maggiori informazioni

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGY75N60 Field Stop IGBT: ON Semiconductor FGY75N60 Field Stop IGBT is a second generation IGBT that uses novel field stop IGBT technology and offers optimum performance. This IGBT feature high current capability, low saturation voltage, high input impedance, and fast switching. Typical applications include solar inverters, UPS, welders, and PFC applications.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FGY75N60SMD DISTI # V99:2348_06359063	ON Semiconductor	600V/75A FIELD STOP IGBT VER.	250	500:$3.6800 250:$4.2440 100:$4.4240 25:$5.1080 10:$5.3540 1:$6.5065
FGY75N60SMD DISTI # V36:1790_06359063	ON Semiconductor	600V/75A FIELD STOP IGBT VER.	54	500:$3.6800 250:$4.2440 100:$4.4240 25:$5.1080 10:$5.3540 1:$6.5065
FGY75N60SMD DISTI # FGY75N60SMDFS-ND	ON Semiconductor	IGBT 600V 150A 750W POWER-247 RoHS: Compliant Min Qty: 1 Container: Tube	378In Stock	2700:$3.5000 900:$4.0688 450:$4.4625 25:$5.3812 10:$5.6440 1:$6.2500
FGY75N60SMD DISTI # 32405190	ON Semiconductor	600V/75A FIELD STOP IGBT VER.	250	500:$3.6800 250:$4.2440 100:$4.4360 25:$5.1080 10:$5.3540 2:$5.9150
FGY75N60SMD DISTI # 31352222	ON Semiconductor	600V/75A FIELD STOP IGBT VER.	225	150:$3.1442 90:$3.1731 60:$3.2143 30:$3.2353
FGY75N60SMD DISTI # 32401809	ON Semiconductor	600V/75A FIELD STOP IGBT VER.	54	500:$3.6800 250:$4.2440 100:$4.4360 25:$5.1080 10:$5.3540 2:$5.9150
FGY75N60SMD DISTI # FGY75N60SMD	ON Semiconductor	Trans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube (Alt: FGY75N60SMD) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 13610	1000:€2.7900 500:€3.0900 100:€3.1900 50:€3.2900 25:€3.3900 10:€3.5900 1:€3.8900
FGY75N60SMD DISTI # FGY75N60SMD	ON Semiconductor	Trans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Rail/Tube (Alt: FGY75N60SMD) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 840	300:$3.0864 150:$3.1646 90:$3.2051 60:$3.2468 30:$3.2680
FGY75N60SMD DISTI # FGY75N60SMD	ON Semiconductor	Trans IGBT Chip N-CH 600V 150A 3-Pin Power-247 Tube - Bulk (Alt: FGY75N60SMD) Min Qty: 90 Container: Bulk	Americas - 0	900:$3.3900 270:$3.4900 450:$3.4900 90:$3.5900 180:$3.5900
FGY75N60SMD DISTI # 88T3388	ON Semiconductor	IGBT Single Transistor, 150 A, 1.9 V, 750 W, 600 V, Power 247, 3 RoHS Compliant: Yes	2407	500:$4.5300 250:$4.9100 100:$5.1000 50:$5.4400 25:$5.7800 10:$6.0400 1:$6.6100
FGY75N60SMD. DISTI # 27AC5741	Fairchild Semiconductor Corporation	FS2PIGBT TO247 75A 600V ROHS COMPLIANT: YES	0	300:$3.1300 150:$3.2100 62:$3.2500 32:$3.2900 1:$3.3100
FGY75N60SMD DISTI # 512-FGY75N60SMD	ON Semiconductor	IGBT Transistors 600V, 75A Field Stop IGBT RoHS: Compliant	507	1:$5.9500 10:$5.3800 25:$5.1300 100:$4.4500 250:$4.2600 500:$3.8800
FGY75N60SMD	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	218	1000:$3.6600 500:$3.8500 100:$4.0100 25:$4.1800 1:$4.5000
FGY75N60SMD DISTI # 7599302	ON Semiconductor	IGBT FIELD STOP 600V 150A 1.9V POWER-247, EA	92	15:£4.7400 6:£5.0000 1:£5.2600
FGY75N60SMD DISTI # 7599302P	ON Semiconductor	IGBT FIELD STOP 600V 150A 1.9V POWER-247, TU	1138	15:£4.7400 6:£5.0000
FGY75N60SMD DISTI # FGY75N60SMD	ON Semiconductor	Transistor: IGBT,600V,75A,375W,TO247-3	12	1:$8.9900 5:$7.7400 25:$6.2100 100:$5.5800
FGY75N60SMD DISTI # 2083380	ON Semiconductor	IGBT, FIELD STOP, 600V,75A,POWER-247 RoHS: Compliant	2407	500:$5.9700 250:$6.5500 100:$6.8500 25:$7.8900 10:$8.2800 1:$9.1500
FGY75N60SMD DISTI # 2083380	ON Semiconductor	IGBT, FIELD STOP, 600V,75A,POWER-247	2597	500:£2.6600 250:£2.9300 100:£3.0600 10:£3.5200 1:£5.0200
FGY75N60SMD DISTI # XSKDRABV0030436	ON SEMICONDUCTOR	RoHS: Compliant	10210 in Stock0 on Order	10210:$4.6800 450:$5.0200

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Disponibilità

Azione:: 479
Su ordine:: 2462
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Il prezzo attuale di FGY75N60SMD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~5,95 USD~~; ~~5,95 USD~~

10: ~~5,38 USD~~; ~~53,80 USD~~

25: ~~5,13 USD~~; ~~128,25 USD~~

100: ~~4,45 USD~~; ~~445,00 USD~~

250: ~~4,26 USD~~; ~~1 065,00 USD~~

500: ~~3,88 USD~~; ~~1 940,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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FGY75N60SMD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes