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CSD17307Q5A

CSD17307Q5A
Mfr. #:
CSD17307Q5A
Descrizione:
Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CSD17307Q5A Scheda dati
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CSD17307Q5A maggiori informazioni CSD17307Q5A Product Details
Attributo del prodotto
Valore attributo
Produttore
Texas Instruments
categoria di prodotto
FET - Single
Serie
NexFET
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Nome depositato
NexFET
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-VSON (5x6)
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
3W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
700pF @ 15V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
14A (Ta), 73A (Tc)
Rds-On-Max-Id-Vgs
10.5 mOhm @ 11A, 8V
Vgs-th-Max-Id
1.8V @ 250μA
Gate-Carica-Qg-Vgs
5.2nC @ 4.5V
Pd-Power-Dissipazione
3 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
10 V
Id-Continuo-Scarico-Corrente
14 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.3 V
Rds-On-Drain-Source-Resistenza
12.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
9.3 ns
Tempo di ritardo all'accensione tipico
4.6 ns
Qg-Gate-Carica
4 nC
Transconduttanza diretta-Min
66 S
Tags
CSD1730, CSD173, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 73 A, 30 V, 8-Pin SON Texas Instruments CSD17307Q5A
***as Instruments
30V, N ch NexFET MOSFET™, single SON5x6, 12.1mOhm 8-VSONP -55 to 150
***ical
Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R
***p One Stop Global
Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R
***ark
N CHANNEL, TRANSISTOR, 30V, 73A, SON
*** Source Electronics
MOSFET N-CH 30V 73A 8SON
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
***ment14 APAC
MOSFET, N CH, 30V, 73A, 8SON; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:8V; Power Dissipation Pd:3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:73A; Power Dissipation Pd:3W; Voltage Vgs Max:10V
***nell
MOSFET, N CH, 30V, 73A, 8SON; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:73A; Napięcie drenu / źródła Vds:30V; Rezystancja przewodzenia Rds(on):0.0084ohm; Napięcie Vgs pomiaru Rds(on):8V; Napięcie progowe Vgs:1.3V; Straty mocy Pd:3W; Rodzaj obudowy tranzystora:SON; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:73A; Napięcie Vgs, maks.:10V; Temperatura robocza, min.:-55°C; Zakres temperatury roboczej:-55°C do +150°C
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descrizione Azione Prezzo
CSD17307Q5A
DISTI # V39:1801_07248760		Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R
RoHS: Compliant		2500
  • 2500:$0.3059
CSD17307Q5A
DISTI # 296-25857-1-ND		MOSFET N-CH 30V 73A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		37740In Stock
  • 1000:$0.3589
  • 500:$0.4487
  • 100:$0.6057
  • 10:$0.7850
  • 1:$0.9000
CSD17307Q5A
DISTI # 296-25857-6-ND		MOSFET N-CH 30V 73A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		37740In Stock
  • 1000:$0.3589
  • 500:$0.4487
  • 100:$0.6057
  • 10:$0.7850
  • 1:$0.9000
CSD17307Q5A
DISTI # 296-25857-2-ND		MOSFET N-CH 30V 73A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		32500In Stock
  • 12500:$0.2831
  • 5000:$0.2940
  • 2500:$0.3158
CSD17307Q5A
DISTI # 31084010		Trans MOSFET N-CH 30V 14A 8-Pin VSONP EP T/R
RoHS: Compliant		2500
  • 2500:$0.3059
CSD17307Q5A
DISTI # CSD17307Q5A		Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R (Alt: CSD17307Q5A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD17307Q5A
    DISTI # CSD17307Q5A    		Trans MOSFET N-CH 30V 14A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17307Q5A)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.2869
    • 5000:$0.2729
    • 10000:$0.2639
    • 15000:$0.2549
    • 25000:$0.2479
    CSD17307Q5A30V N Channel NexFET&#153,Power MOSFET6561
    • 1000:$0.2300
    • 750:$0.2500
    • 500:$0.3200
    • 250:$0.3900
    • 100:$0.4200
    • 25:$0.4900
    • 10:$0.5300
    • 1:$0.5900
    CSD17307Q5APower Field-Effect Transistor, 73A I(D), 30V, 0.0173ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		767990
    • 1000:$0.2900
    • 500:$0.3100
    • 100:$0.3200
    • 25:$0.3400
    • 1:$0.3600
    CSD17307Q5A
    DISTI # 595-CSD17307Q5A    		MOSFET 30V N Channel NexFET Power MOSFET
    RoHS: Compliant    		84
    • 1:$0.7400
    • 10:$0.6140
    • 100:$0.3960
    • 1000:$0.3170
    • 2500:$0.2880
    CSD17307Q5A 89
      CSD17307Q5A
      DISTI # 8274833P      		MOSFET N-CHANNEL 30V 14A NEXFET SON8EP, RL2500
      • 50:£0.3660
      • 200:£0.2870
      • 500:£0.2810
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      OMO.#: OMO-CSD17310Q5A

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      OMO.#: OMO-CSD17310Q5A--TEXAS-INSTRUMENTS

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      OMO.#: OMO-CSD17312Q5-TEXAS-INSTRUMENTS

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      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
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      10
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      3,28 USD
      100
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      146,65 USD
      1000
      0,28 USD
      276,00 USD
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