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SIJ470DP-T1-GE3

SIJ470DP-T1-GE3
Mfr. #:
SIJ470DP-T1-GE3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIJ470DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIJ470DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay / Siliconix
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
MOSFET di potenza
Confezione
Bobina
Unità di peso
0.017870 oz
Stile di montaggio
SMD/SMT
Nome depositato
ThunderFET TrenchFET
Pacchetto-Custodia
SO-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
56.8 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
7 ns
Ora di alzarsi
8 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
58.8 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3.5 V
Rds-On-Drain-Source-Resistenza
9.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
22 ns
Tempo di ritardo all'accensione tipico
12 ns
Qg-Gate-Carica
36.9 nC
Modalità canale
Aumento
Tags
SIJ470, SIJ47, SIJ4, SIJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 17.4A 5-Pin(4+Tab) PowerPAK SO
***i-Key
MOSFET N-CH 100V 58.8A PPAK SO-8
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descrizione Azione Prezzo
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		964In Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 58.8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7238
SIJ470DP-T1-GE3
DISTI # SIJ470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 17.4A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIJ470DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.6839
  • 12000:$0.6629
  • 18000:$0.6359
  • 30000:$0.6189
  • 60000:$0.6019
SIJ470DP-T1-GE3
DISTI # 78-SIJ470DP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
RoHS: Compliant		4267
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
  • 3000:$0.7840
SIJ470DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant		Europe - 6000
    SIJ470DP-T1-GE3Vishay IntertechnologiesMOSFET 100V 9.1mOhm@10V 58.8A N-CH
    RoHS: Compliant    		Americas -
    • 3000:$0.6580
    • 12000:$0.5920
    Immagine Parte # Descrizione
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3

    		 MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP-T1-GE3

    Mfr.#: SIJ470DP-T1-GE3

    OMO.#: OMO-SIJ470DP-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 100V 9.1mOhm@10V 58.8A N-CH
    SIJ470DP

    Mfr.#: SIJ470DP

    OMO.#: OMO-SIJ470DP-1190

    		 Nuovo e originale
    SIJ470DPT1GE3

    Mfr.#: SIJ470DPT1GE3

    OMO.#: OMO-SIJ470DPT1GE3-1190

    		 Power Field-Effect Transisto
    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
    Inserisci la quantità:
    Il prezzo attuale di SIJ470DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,89 USD
    0,89 USD
    10
    0,84 USD
    8,44 USD
    100
    0,80 USD
    79,92 USD
    500
    0,75 USD
    377,40 USD
    1000
    0,71 USD
    710,40 USD
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