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IGW25N120H3

IGW25N120H3
Mfr. #:
IGW25N120H3
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IGW25N120H3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IGW25N120H3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.05 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
50 A
Pd - Dissipazione di potenza:
326 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
HighSpeed 3
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
600 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IGW25N120H3FKSA1 IGW25N12H3XK SP000674424
Unità di peso:
1.340411 oz
Tags
IGW25N120H, IGW25N, IGW25, IGW2, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***o
    V***o
    AZ

    The parcel received .. Until i checked

    2019-06-08
    R***o
    R***o
    UA

    To ukraine in the city of dnieper 16 days! !! Packed in a soft culek with pouches, arrived 5 pieces, and ordered 4-thanks to the seller for a nice bonus.All transformers are working, give an excellent electro arc!!! Seller recommend to cooperation!!!

    2019-06-21
    E***d
    E***d
    IL

    ok!

    2019-02-18
    A***H
    A***H
    FI

    Fast delivery and good packing. Great seller!

    2019-05-24
High Speed Trench & Fieldstop IGBTs
Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.Learn more
Parte # Mfg. Descrizione Azione Prezzo
IGW25N120H3
DISTI # 32015461		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
RoHS: Compliant		95
  • 200:$4.1182
  • 100:$4.4880
  • 50:$5.0873
  • 10:$5.2402
  • 5:$6.1582
IGW25N120H3FKSA1
DISTI # IGW25N120H3FKSA1-ND		Infineon Technologies AGIGBT 1200V 50A 326W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		3557In Stock
  • 1200:$3.4475
  • 720:$4.0145
  • 240:$4.6468
  • 10:$5.5850
  • 1:$6.1700
IGW25N120H3FKSA1
DISTI # IGW25N120H3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW25N120H3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.8900
  • 242:$2.7900
  • 482:$2.6900
  • 1200:$2.5900
  • 2400:$2.5900
IGW25N120H3FKSA1
DISTI # 50Y1985		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube - Bulk (Alt: 50Y1985)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IGW25N120H3FKSA1
    DISTI # 50Y1985    		Infineon Technologies AGIGBT, 1.2KV, 50A, 175DEG C, 326W, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):2.05V,Power Dissipation Pd:326W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,MSL:MSL 1 - Unlimited RoHS Compliant: Yes100
    • 500:$3.4400
    • 250:$3.8400
    • 100:$4.0500
    • 50:$4.2600
    • 25:$4.4600
    • 10:$4.6700
    • 1:$5.4900
    IGW25N120H3
    DISTI # 726-IGW25N120H3    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		0
    • 1:$5.4900
    • 10:$4.6700
    • 100:$4.0500
    • 250:$3.8400
    • 500:$3.4400
    IGW25N120H3FKSA1
    DISTI # 726-IGW25N120H3FKSA1    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		0
    • 1:$5.4900
    • 10:$4.6700
    • 100:$4.0500
    • 250:$3.8400
    • 500:$3.4400
    IGW25N120H3XK
    DISTI # 726-IGW25N120H3XK    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		0
    • 1:$5.4900
    • 10:$4.6700
    • 100:$4.0500
    • 250:$3.8400
    • 500:$3.4400
    • 1000:$2.9000
    • 2500:$2.7600
    IGW25N120H3FKSA1
    DISTI # 8268232    		Infineon Technologies AGIGBT N-CH 1200V 50A HIGH-SPEED TO247, EA47
    • 240:£2.7000
    • 100:£2.7600
    • 50:£2.9900
    • 25:£3.2000
    • 1:£5.4100
    IGW25N120H3
    DISTI # IGW25N120H3    		Infineon Technologies AGTransistor: IGBT,1200V,50A,326W,TO247-3,Series: H3210
    • 1:$5.6000
    • 3:$4.7900
    • 10:$3.8500
    • 30:$3.4700
    IGW25N120H3
    DISTI # IGBT1162    		Infineon Technologies AGIGBT 1200V50A2.05VTO247-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 240:$2.7400
    IGW25N120H3FKSA1
    DISTI # 2480885    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		240
    • 500:$5.1800
    • 250:$5.7900
    • 100:$6.1000
    • 10:$7.0400
    • 1:$8.2700
    IGW25N120H3FKSA1
    DISTI # 2480885    		Infineon Technologies AGIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		240
    • 500:£2.6500
    • 250:£2.9600
    • 100:£3.1200
    • 10:£3.6000
    • 1:£4.6900
    Immagine Parte # Descrizione
    MJW1302AG

    Mfr.#: MJW1302AG

    OMO.#: OMO-MJW1302AG

    		 Bipolar Transistors - BJT 15A 250V 200W PNP
    MJW3281AG

    Mfr.#: MJW3281AG

    OMO.#: OMO-MJW3281AG

    		 Bipolar Transistors - BJT 15A 230V 200W NPN
    MJW21195G

    Mfr.#: MJW21195G

    OMO.#: OMO-MJW21195G

    		 Bipolar Transistors - BJT 16A 250V 200W PNP
    C2M0160120D

    Mfr.#: C2M0160120D

    OMO.#: OMO-C2M0160120D

    		 MOSFET SIC MOSFET 1200V RDS ON 160 mOhm
    SG3525ANG

    Mfr.#: SG3525ANG

    OMO.#: OMO-SG3525ANG

    		 Switching Controllers 8-35V PWM
    PR02000201001JR500

    Mfr.#: PR02000201001JR500

    OMO.#: OMO-PR02000201001JR500

    		 Metal Film Resistors - Through Hole 2watts 1Kohms 5%
    PR02000205101JR500

    Mfr.#: PR02000205101JR500

    OMO.#: OMO-PR02000205101JR500

    		 Metal Film Resistors - Through Hole 2watts 5.1Kohms 5%
    PR02000205103JR500

    Mfr.#: PR02000205103JR500

    OMO.#: OMO-PR02000205103JR500-VISHAY

    		 Metal Film Resistors - Through Hole 2watts 510Kohms 5%
    PR02000203903JR500

    Mfr.#: PR02000203903JR500

    OMO.#: OMO-PR02000203903JR500-VISHAY

    		 Metal Film Resistors - Through Hole 2watts 390Kohms 5%
    PR02000201001JR500

    Mfr.#: PR02000201001JR500

    OMO.#: OMO-PR02000201001JR500-VISHAY

    		 Metal Film Resistors - Through Hole 2watts 1Kohms 5%
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
    Il prezzo attuale di IGW25N120H3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    5,49 USD
    5,49 USD
    10
    4,67 USD
    46,70 USD
    100
    4,05 USD
    405,00 USD
    250
    3,84 USD
    960,00 USD
    500
    3,44 USD
    1 720,00 USD
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